OM6215SS datasheet(2/4 Pages) ETC

Part #	OM6215SS

Description	TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE

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ELECTRICAL CHARACTERISTICS: T

C = 25° unless otherwise noted

ELECTRICAL CHARACTERISTICS: T

C = 25° unless otherwise noted

STATIC P/N OM6214SS (Per FET) (100 Volt)

STATIC P/N OM6215SS (Per FET) (200 Volt)

Parameter

Min. Typ. Max. Units Test Conditions

Parameter

Min. Typ. Max. Units Test Conditions

BV

DSS

Drain-Source Breakdown

100

V

GS = 0,

BV

DSS

Drain-Source Breakdown

200

V

GS = 0,

Voltage

I

D = 250 mA

Voltage

I

D = 250 mA

V

GS(th)

Gate-Threshold Voltage

2.0

4.0

V

DS = VGS, ID = 250 mAVGS(th)

Gate-Threshold Voltage

2.0

4.0

V

DS = VGS, ID = 250 m

I

GSSF

Gate-Body Leakage

±100

nA

V

GS = ±20 V

I

GSSF

Gate-Body Leakage

±100

nA

V

GS = ±20 V

I

DSS

Zero Gate Voltage Drain

0.1

0.25

mA

V

DS = Max. Rat., VGS = 0

I

DSS

Zero Gate Voltage Drain

0.1

0.25

mA

V

DS = Max. Rat., VGS = 0

Current

0.2

1.0

mA

V

DS = 0.8 Max. Rat., VGS = 0,

Current

0.2

1.0

mA

V

DS = 0.8 Max. Rat., VGS = 0,

T

C = 125° C

T

C = 125° C

I

D(on)

On-State Drain Current1

30

A

V

DS

2 V

DS(on), VGS = 10 V

I

D(on)

On-State Drain Current1

25

A

V

DS

2 V

DS(on), VGS = 10 V

V

DS(on)

Static Drain-Source On-State

1.1

1.3

V

GS = 10 V, ID = 20 A

V

DS(on)

Static Drain-Source On-State

1.36

1.52

V

GS = 10 V, ID = 16 A

Voltage1

R

DS(on)

Static Drain-Source On-State

.055 .065

V

GS = 10 V, ID = 20 A

R

DS(on)

Static Drain-Source On-State

.085

.095

V

GS = 10 V, ID = 16 A

Resistance1

R

DS(on)

Static Drain-Source On-State

.09

0.11

V

GS = 10 V, ID = 20 A,

R

DS(on)

Static Drain-Source On-State

0.14

0.17

V

GS = 10 V, ID = 16 A,

Resistance1

T

C = 125 C

Resistance1

T

C = 125 C

DYNAMIC

g

fs

Forward Transductance1

9.0

10

S(W )

V

DS

2 V

DS(on), ID = 20 A

g

fs

Forward Transductance1

8.0

12.5

S(W )

V

DS

2 V

DS(on), ID = 16 A

C

iss

Input Capacitance

2700

pF

V

GS = 0

C

iss

Input Capacitance

2400

pF

V

GS = 0

C

oss

Output Capacitance

1300

pF

V

DS = 25 V

C

oss

Output Capacitance

600

pF

V

DS = 25 V

C

rss

Reverse Transfer Capacitance

470

pF

f = 1 MHz

C

rss

Reverse Transfer Capacitance

250

pF

f = 1 MHz

t

d(on)

Turn-On Delay Time

28

ns

V

DD = 30 V, ID @ 20 A

t

d(on)

Turn-On Delay Time

25

ns

V

DD = 75 V, ID @ 16 A

t

r

Rise Time

45

ns

R

g = 5.0 W , VG = 10V

t

r

Rise Time

60

ns

R

g = 5.0 W ,VGS = 10V

t

d(off)

Turn-Off Delay Time

100

ns

t

d(off)

Turn-Off Delay Time

85

ns

t

f

Fall Time

50

ns

t

f

Fall Time

38

ns

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

S

Continuous Source Current

- 30

A

Modified MOSPOWER

I

S

Continuous Source Current

- 25

A

Modified MOSPOWER

(Body Diode)

symbol showing

(Body Diode)

symbol showing

I

SM

Source Current1

- 140

A

the integral P-N

I

SM

Source Current1

- 100

A

the integral P-N

(Body Diode)

Junction rectifier.

(Body Diode)

Junction rectifier.

V

SD

Diode Forward Voltage1

- 2.5

V

T

C = 25 C, IS = -40 A, VGS = 0

V

SD

Diode Forward Voltage1

- 2

V

T

C = 25 C, IS = -30 A, VGS = 0

t

rr

Reverse Recovery Time

400

ns

T

J = 150 C,IF = IS,trr

Reverse Recovery Time

350

ns

T

J = 150 C,IF = IS,

dl

F/ds = 100 A/ms

dl

F/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle

2%.

1 Pulse Test: Pulse Width 300msec, Duty Cycle

2%.

(MOSFET) switching times are

essentially independent of

operating temperature.

(MOSFET) switching times are

essentially independent of

operating temperature.

G

D

S

G

D

S

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