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CY7C10211B-10ZC Datasheet(PDF) 3 Page - Cypress Semiconductor

Part # CY7C10211B-10ZC
Description  1-Mbit (64K x 16) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C10211B-10ZC Datasheet(HTML) 3 Page - Cypress Semiconductor

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CY7C1021B
CY7C10211B
Document #: 38-05145 Rev. *A
Page 3 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature .................................–65
°C to +150°C
Ambient Temperature with
Power Applied.............................................–55
°C to +125°C
Supply Voltage on VCC to Relative GND[2] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[2] ......................................–0.5V to VCC+0.5V
DC Input Voltage[2]...................................–0.5V to VCC+0.5V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature (TA)[3]
VCC
Commercial
0
°C to +70°C
5V
± 10%
Industrial
–40
°C to +85°C5V ± 10%
Automotive
–40
°C to +125°C5V ± 10%
Electrical Characteristics Over the Operating Range
Parameter
Description
Test
Conditions
7C10211B-10 7C1021B-12 7C1021B-15
Unit
Min.
Max.
Min.
Max.
Min.
Max.
VOH
Output HIGH
Voltage
VCC = Min., IOH = –4.0 mA
2.4
2.4
2.4
V
VOL
Output LOW
Voltage
VCC = Min., IOL = 8.0 mA
0.4
0.4
0.4
V
VIH
Input HIGH
Voltage
2.2
6.0
2.2
6.0
2.2
6.0
V
VIL
Input LOW
Voltage[2]
−0.5
0.8
–0.5
0.8
–0.5
0.8
V
IIX
Input Load
Current
GND < VI < VCC
Com’l / Ind’l
−1
+1
–1
+1–1+1
µA
Automotive
-
-
-
-
-4
+4
µA
IOZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
Com’l / Ind’l
−1
+1
–1
+1–1+1
µA
Automotive
-
-
-
-
-4
+4
µA
IOS
Output Short
Circuit Current[4]
VCC = Max., VOUT = GND
−300
–300
–300
mA
ICC
VCC Operating
Supply Current
VCC = Max., IOUT = 0
mA, f = fMAX = 1/tRC
Com’l / Ind’l
150
140
130
mA
Automotive
-
-
150
mA
ISB1
Automatic CE
Power-Down
Current—TTL
Inputs
Max. VCC, CE > VIH
VIN > VIH or VIN < VIL, f
= fMAX
Com’l / Ind’l
40
40
40
mA
Automotive
-
-
50
mA
ISB2
Automatic CE
Power-Down
Current—CMOS
Inputs
Max. VCC, CE > VCC
0.3V, VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
Com’l / Ind’l
10
10
10
mA
Automotive
-
-
15
mA
L Version
0.5
0.5
0.5
mA
Thermal Resistance[5]
Parameter
Description
Test Conditions
44-lead SOJ
44-lead
TSOP-II
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA / JESD51.
64.32
76.89
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
31.03
14.28
°C/W
Notes:
2. VIL (min.) = –2.0V and VIH(max) = VCC + 0.5V for pulse durations of less than 20 ns.
3. TA is the “Instant On” case temperature.
4. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
5. Tested initially and after any design or process changes that may affect these parameters.


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