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PESD5V0L5UV Datasheet(PDF) 2 Page - NXP Semiconductors |
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PESD5V0L5UV Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 11 page 2004 Mar 23 2 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package PESD3V3L5UV; PESD5V0L5UV FEATURES • Uni-directional ESD protection of up to five lines • Bi-directional ESD protection of up to four lines • Low diode capacitance • Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs • Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A • Ultra low leakage current: IRM = 8 nA at VRWM =5V • ESD protection > 20 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs. APPLICATIONS • Cellular handsets and accessories • Portable electronics • Computers and peripherals • Communications systems • Audio and video equipment. DESCRIPTION Low capacitance 5-fold ESD protection array in the ultra small SOT666 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD). MARKING Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER MARKING CODE(1) PESD3V3L5UV *E1 PESD5V0L5UV *E2 PINNING PIN DESCRIPTION 1 cathode 1 2 common anode 3 cathode 2 4 cathode 3 5 cathode 4 6 cathode 5 001aaa213 13 2 4 5 6 1 3 42 5 6 sym011 Fig.1 Simplified outline (SOT666) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VALUE UNIT VRWM reverse standoff voltage PESD3V3L5UV 3.3 V PESD5V0L5UV 5 V Cd diode capacitance PESD3V3L5UV 22 pF PESD5V0L5UV 16 pF number of protected lines 5 ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PESD3V3L5UV − plastic surface mounted package; 6 leads SOT666 PESD5V0L5UV − plastic surface mounted package; 6 leads SOT666 |
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