Manufacturer | Part # | Datasheet | Description |
Hitachi Semiconductor |
PF01410A
|
25Kb / 4P |
MOS FET Power Amplifier Module for GSM Handy Phone
|
PF01411A
|
25Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
PF01411B
|
26Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
PF01412A
|
25Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Renesas Technology Corp |
PF08109B
|
249Kb / 25P |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
|
Hitachi Semiconductor |
PF00105A
|
62Kb / 11P |
MOS FET Power Amplifier Module for AMPS Handy Phone
|
Renesas Technology Corp |
PF08127
|
140Kb / 18P |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
Oct. 2002 |
Hitachi Semiconductor |
PF0415A
|
32Kb / 5P |
MOS FET Power Amplifier Module for PCS 1900 Handy Phone
|
Renesas Technology Corp |
E2081606_PF08127B
|
183Kb / 16P |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
|
Hitachi Semiconductor |
PF0414B
|
26Kb / 4P |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone
|