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AM29PDL128G70 Datasheet(PDF) 2 Page - SPANSION |
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AM29PDL128G70 Datasheet(HTML) 2 Page - SPANSION |
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2 / 69 page  PRELIMINARY This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 25685 Rev: B Amendment/+2 Issue Date: July 29, 2002 Refer to AMD’s Website (www.amd.com) for the latest information. Am29PDL128G 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES s 128Mbit Page Mode device — Word (16-bit) or double word (32-bit) mode selectable via WORD# input — Page size of 8 words/4 double words: Fast page read access from random locations within the page s Single power supply operation — Full Voltage range: 2.7 to 3.6 volt read, erase, and program operations for battery-powered applications s Simultaneous Read/Write Operation — Data can be continuously read from one bank while executing erase/program functions in another bank — Zero latency switching from write to read operations s FlexBank Architecture — 4 separate banks, with up to two simultaneous operations per device — Organized as two 16 Mbit banks (Bank 1 & 4) and two 48 Mbit banks (Bank 2 & 3) s VersatileI/OTM (V IO) Control — Output voltage generated and input voltages tolerated on the device is determined by the voltage on the V IO pin s SecSi (Secured Silicon) Sector region — 128 words (64 double words) accessible through a command sequence s Both top and bottom boot blocks in one device s Manufactured on 0.17 µm process technology s 20-year data retention at 125°C s Minimum 1 million write cycle guarantee per sector PERFORMANCE CHARACTERISTICS s High Performance — Page access times as fast as 25 ns — Random access times as fast as 70 ns s Power consumption (typical values at 10 MHz) — 38 mA active read current — 17 mA program/erase current — 1.5 µA typical standby mode current SOFTWARE FEATURES s Software command-set compatible with JEDEC 42.4 standard — Backward compatible with Am29F and Am29LV families s CFI (Common Flash Interface) complaint — Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices s Erase Suspend / Erase Resume — Suspends an erase operation to allow read or program operations in other sectors of same bank s Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences HARDWARE FEATURES s Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion s Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data s WP# (Write Protect) input — At V IL, protects the two top and two bottom sectors, regardless of sector protect/unprotect status — At V IH, allows removal of sector protection — An internal pull up to Vcc is provided s Persistent Sector Protection — A command sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector — Sectors can be locked and unlocked in-system at V CC level s Password Sector Protection — A sophisticated sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector using a user-defined 64-bit password s ACC (Acceleration) input provides faster programming times in a factory setting s Package options — 80-ball Fortified BGA |
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