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LM2744 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM2744 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 22 page Electrical Characteristics (Continued) V CC = 3.3V unless otherwise indicated. Typicals and limits appearing in plain type apply for TA=TJ= 25˚C. Limits appearing in boldface type apply over full Operating Temperature Range. Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. Symbol Parameter Conditions Min Typ Max Units GATE DRIVE I Q-BOOT BOOT Pin Quiescent Current V BOOT = 12V, VSD =0 18 90 µA R HG_UP High-Side MOSFET Driver Pull-Up ON resistance V BOOT -VSW = 9.5V@350mA 3 Ω R HG_DN High-Side MOSFET Driver Pull-Down ON resistance V BOOT -VSW = 4.5V@350mA 2 Ω R LG_UP Low-Side MOSFET Driver Pull-Up ON resistance V BOOT -VSW = 9.5V@350mA 3 Ω R LG_DN Low-Side MOSFET Driver Pull-Down ON resistance V BOOT -VSW = 4.5V@350mA 2 Ω OSCILLATOR F SW PWM Frequency R FADJ = 702.1 k Ω 50 kHz R FADJ = 98.74 k Ω 300 R FADJ = 45.74 k Ω 475 600 725 R FADJ = 24.91 k Ω 1000 D Max High-Side Duty Cycle F SW = 300kHz F SW = 600kHz F SW = 1MHz 80 76 73 % LOGIC INPUTS AND OUTPUTS V STBY-IH Standby High Trip Point V FB = 0.575V, VBOOT = 3.3V, V SD Rising 1.1 V V STBY-IL Standby Low Trip Point V FB = 0.575V, VBOOT = 3.3V, V SD Falling 0.232 V V SD-IH SD Pin Logic High Trip Point V SD Rising 1.3 V V SD-IL SD Pin Logic Low Trip Point V SD Falling 0.8 V V PWGD-TH-LO PWGD Pin Trip Points FB Falling, V REF = 0.5V 0.3262 0.347 0.3678 V FB Falling, V REF = 1.5V 0.993 1.045 1.097 V V PWGD-TH-HI PWGD Pin Trip Points FB Rising, V REF = 0.5V 0.551 0.586 0.621 V FB Rising, V REF = 1.5V 1.6692 1.757 1.8448 V V PWGD-HYS PWGD Hysteresis FB Falling FB Rising 60 90 mV Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Opearting Ratings do not imply guaranteed performance limits. Note 2: The power MOSFETs can run on a separate 1V to 16V rail (Input voltage, VIN). Practical lower limit of VIN depends on selection of the external MOSFET. Note 3: The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin. www.national.com 4 |
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