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TG2213S Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TG2213S Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 7 page  TG2213S 2002-11-14 2 Electrical Characteristics (VCON(Hi) ==== 2.7 V, VCON(LO) ==== 0 V, Ta ==== 25°C, Zg ==== Zl ==== 50 W W W W) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit LOSS (1) 1 f = 1.0 GHz, Pi = 0dBmW ¾ 0.35 0.65 LOSS (2) 1 f = 2.0 GHz, Pi = 0dBmW ¾ 0.40 0.70 Insertion loss LOSS (3) 1 f = 2.5 GHz, Pi = 0dBmW ¾ 0.45 0.75 dB ISL (1) 1 f = 1.0 GHz, Pi = 0dBmW 20 24 ¾ ISL (2) 1 f = 2.0 GHz, Pi = 0dBmW 20 24 ¾ Isolation ISL (3) 1 f = 2.5 GHz, Pi = 0dBmW 18 22 ¾ dB Input power at 1dB gain compression Pi1dB 1 f = 2.5 GHz 12 17 ¾ dBmW Control current ICON ¾ no RF signal input ¾ ¾ 0.01 mA Switching time tsw 1 ¾ 50 200 ns Switch Connection VC1 VC2 Switch Condition RFcom – RF1 RFcom – RF2 Hi Low ON OFF Low Hi OFF ON Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. RFcom RF2 RF1 RFcom RF2 RF1 |
Similar Part No. - TG2213S |
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Similar Description - TG2213S |
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