SI3850DV datasheet(5/6 Pages) VISHAY

Part #	SI3850DV

Description	Complementary MOSFET Half-Bridge (N- and P-Channel)

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 6 page

Si3850DV

Vishay Siliconix

Document Number: 70778

S-55457—Rev. B, 09-Mar-98

www.vishay.com

S FaxBack 408-970-5600

2-5

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

PCHANNEL

0

0.5

1.0

1.5

2.0

2.5

0

0.5

1.0

1.5

2.0

2.5

3.0

0

2

4

6

8

0

0.3

0.6

0.9

1.2

1.5

1.8

0

0.4

0.8

1.2

1.6

2.0

0

0.5

1.0

1.5

2.0

2.5

Output Characteristics

Transfer Characteristics

Gate Charge

On-Resistance vs. Drain Current

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

Qg – Total Gate Charge (nC)

VDS – Drain-to-Source Voltage (V)

VGS = 10 V

ID = 0.85 A

ID – Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ – Junction Temperature (_C)

0

0.5

1.0

1.5

2.0

2.5

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

20

40

60

80

100

120

04

8

12

16

20

Crss

Coss

Ciss

0

0.4

0.8

1.2

1.6

2.0

–50

–25

0

25

50

75

100

125

150

VGS = 4.5 V

ID = 0.85 A

VGS = 5.0 thru 4.0 V

3.5 V

2.0 V

3.0 V

2.5 V

25

_C

125

_C

TC = –55_C

VGS = 4.5 V

VGS = 3.0 V

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SI3850DV Datasheet(PDF) 5 Page - Vishay Siliconix

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