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SI3850DV Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI3850DV Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 6 page Si3850DV Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70778 S-55457—Rev. B, 09-Mar-98 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) NCHANNEL 0 0.3 0.6 0.9 1.2 1.5 0 6 12 18 24 30 0.001 0.010 0.100 1.000 10.000 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) TJ – Temperature (_C) Time (sec) 0.1 1.0 4.0 TJ = 150_C TJ = 25_C –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 –50 –25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 10–4 10–3 10–2 10–1 110 30 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0 0.2 0.4 0.6 0.8 012345 ID = 1.2 A |
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