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BAR64V-04-GS18 Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAR64V-04-GS18 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85694 Rev. 1.2, 26-Apr-04 VISHAY BAR64V-04 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) Diode capacitance f = 1 MHz, VR = 0 CD 0.5 pF f = 1 MHz, VR = 1 V CD 0.37 0.5 pF f = 1 MHz, VR = 20 V CD 0.23 0.35 pF Forward resistance f = 100 MHz, IF = 1 mA rf 10 20 Ω f = 100 MHz, IF = 10 mA rf 2.0 3.8 Ω f = 100 MHz, IF = 100 mA rf 0.8 1.35 Ω Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA trr 1.8 µs Parameter Test condition Symbol Min Typ. Max Unit Fig. 1 Forward Resistance vs. Forward Current Fig. 2 Diode Capacitance vs. Reverse Voltage 0.1 1.0 10.0 100.0 0.1 1.0 10 100 18342 IF - Forward Current ( mA ) f = 100 MHz 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 4 8 12 16 20 24 28 18334 VR - Reverse V oltage (V) f=1MHz Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Reverse Voltage vs. Reverse Current 0.01 0.10 1.00 10.00 100.00 0.5 0.6 0.7 0.8 0.9 1.0 VF - Forward Voltage(V) 18326 0 50 100 150 200 250 300 0.01 0.1 1.0 10 100 1000 IR - Reverse Current ( µA) 18330 |
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