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CY7C1541KV18 Datasheet(PDF) 15 Page - Cypress Semiconductor

Part # CY7C1541KV18
Description  72-Mbit QDR짰II SRAM 4-Word BurstArchitecture (2.0 Cycle Read Latency)
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1541KV18 Datasheet(HTML) 15 Page - Cypress Semiconductor

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CY7C1541KV18, CY7C1556KV18
CY7C1543KV18, CY7C1545KV18
Document Number: 001-15700 Rev. *F
Page 15 of 27
TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range [13, 14, 15]
Parameter
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH Voltage
IOH = −2.0 mA
1.4
V
VOH2
Output HIGH Voltage
IOH = −100 μA1.6
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
0.4
V
VOL2
Output LOW Voltage
IOL = 100 μA0.2
V
VIH
Input HIGH Voltage
0.65VDD VDD + 0.3
V
VIL
Input LOW Voltage
–0.3
0.35VDD
V
IX
Input and Output Load Current
GND
≤ V
I ≤ VDD
–5
5
μA
0
0
1
2
.
.
29
30
31
Boundary Scan Register
Identification Register
0
1
2
.
.
.
.
108
0
1
2
Instruction Register
Bypass Register
Selection
Circuitry
Selection
Circuitry
TAP Controller
TDI
TDO
TCK
TMS
Notes
13. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.
14. Overshoot: VIH(AC) < VDDQ + 0.35V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 0.3V (Pulse width less than tCYC/2).
15. All Voltage referenced to Ground.
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