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IRG4IBC10UD Datasheet(PDF) 1 Page - International Rectifier |
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IRG4IBC10UD Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features E G C UltraFast Co-Pack IGBT 10/27/99 • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220 Full-Pak Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED® diodes optimized for performance with IGBTs Minimized recovery characteristics require less/no snubbing Parameter Typ. Max. Units RθJC Junction-to-Case - IGBT ––– 5.0 RθJC Junction-to-Case - Diode ––– 9.0 °C/W RθJA Junction-to-Ambient, typical socket mount ––– 65 Wt Weight 2.1 (0.075) ––– g (oz) Thermal Resistance VCES = 600V VCE(on) typ. = 2.15V @VGE = 15V, IC = 5.0A tf(typ.) = 140ns Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 6.8 IC @ TC = 100°C Continuous Collector Current 3.9 ICM Pulsed Collector Current 27 A ILM Clamped Inductive Load Current 27 IF @ TC = 100°C Diode Continuous Forward Current 3.9 IFM Diode Maximum Forward Current 27 VISOL RMS Isolated Voltage, Terminal to case, t=1min 2500 V VGE Gate-to-Emitter Voltage ± 20 PD @ TC = 25°C Maximum Power Dissipation 25 W PD @ TC = 100°C Maximum Power Dissipation 10 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf•in (1.1 N•m) Absolute Maximum Ratings www.irf.com 1 TO-220 Full-Pak PD - 93765 N-channel |
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