IRHNJ593034 datasheet(8/8 Pages) IRF

Part #	IRHNJ593034

Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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Manufacturer	IRF [International Rectifier]

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IRHNJ597034

Pre-Irradiation

8

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➃ Pulse width

≤ 300 µs; Duty Cycle ≤ 2%

➄ Total Dose Irradiation with VGS Bias.

-12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

➅ Total Dose Irradiation with VDS Bias.

-48 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = - 25V, starting TJ = 25°C, L=0.44mH

Peak IL = - 22A, VGS = -12V

➂ ISD ≤ - 22A, di/dt ≤ - 290A/µs,

VDD ≤ - 60V, TJ ≤ 150°C

Footnotes:

Case Outline and Dimensions — SMD-0.5

PAD ASSIGNMENTS

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

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Data and specifications subject to change without notice. 02/03

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