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RN47A5 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN47A5 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page RN47A5 2002-01-30 2 Maximum Ratings (Ta ==== 25°C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V Collector current IC 100 mA Maximum Ratings (Ta ==== 25°C) (Q2) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7 V Collector current IC -100 mA Maximum Ratings (Ta ==== 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector power dissipation PC (Note) 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Total rating |
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