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S1M8657X01-F0T0 Datasheet(PDF) 6 Page - Samsung semiconductor |
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S1M8657X01-F0T0 Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 34 page S1M8657 TX IF/BBA WITH AGC 6 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Power supply V CC -0.5V to 3.6V Storage temperature T STG -55 °C to +125°C Operating temperature T OPR -30 °C to +85°C Electrostatic discharge rating HBM ± 1500V MM ± 200V RECOMMENDED OPERATING CONDITIONS Characteristic Symbol Value Power supply Vcc 2.7V to 3.6V Ambient operating temperature Ta -30 °C to +85°C ELECTRICAL CHARACTERISTICS (V CC = 3.3V, Ta = 25° °C) Characteristic Test Conditions Symbol Min Typ Max Units Current consumption CDMA idle mode ICRX - 20 100 uA Current consumption FM idle mode IFRX - 20 100 uA Current consumption CDMA talk mode AGC gain : Min ICTX1 - 20 30 mA CDMA talk mode AGC gain : Max ICTX2 - 40 50 mA Current consumption FM talk mode AGC gain : Min IFTX1 - 20 30 mA FM talk mode AGC gain : Max IFTX2 - 40 50 mA Logic high input VIH V DD-0.4 - - V Logic low input VIL - - 0.4 V Logic high output VOH V DD-0.4 - - V Logic low output VOL - - 0.4 V Digital input capacitance CDI - - 5 pF Digital output load capacitance TXIF_OUT, TXIF_OUT/ CDOL - - 5 pF TCXO input impedance Attach C = 2pF ZTCXO 5 - - k Ω |
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