2001 Jan 15

2

Philips Semiconductors

Preliminary specification

Band-switching diode

BA278

FEATURES

• Small plastic SMD package

• Continuous reverse voltage: max. 35 V

• Continuous forward current: max. 100 mA

• Low diode capacitance: max. 1.2 pF

• Low diode forward resistance: max. 0.7 Ω.

APPLICATIONS

• Low loss band switching in VHF television tuners.

• Surface mount band-switching circuits.

DESCRIPTION

Planar high performance band-switching diode in a small

plastic SOD523V SMD package.

PINNING

PIN

DESCRIPTION

1

cathode

2

anode

Fig.1

Simplified outline (SOD523V)

and symbol.

Marking code:

handbook, halfpage

12

;

Top view

MAM399

12

Top view

MBK258

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

35

V

continuous forward current

−

100

mA

total power dissipation

°C

−

715

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

ELECTRICAL CHARACTERISTICS

°C unless otherwise specified.

Note

1.

Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

1

V

reverse current

50

nA

°C1

µA

diode capacitance

1.2

pF

diode forward resistance

0.7

Ω

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to soldering-point

85

K/W