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AM29DL322GT90 Datasheet(PDF) 31 Page - Advanced Micro Devices

Part # AM29DL322GT90
Description  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29DL322GT90 Datasheet(HTML) 31 Page - Advanced Micro Devices

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February 9, 2005
Am29DL32xG
29
DA TA SH EET
Table 14.
Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever happens
later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20–A12 uniquely select any sector.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased.
Notes:
1.
See Table 1 for description of bus operations.
2.
All values are in hexadecimal.
3.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4.
Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
5.
Unless otherwise noted, address bits A20–A11 are don’t cares.
6.
No unlock or command cycles required when bank is reading
array data.
7.
The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when a bank is in the autoselect mode, or if DQ5 goes high (while
the bank is providing status information).
8.
The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or SecSi Sector factory protect
information. Data bits DQ15–DQ8 are don’t care. See the
Autoselect Command Sequence section for more information.
9.
The data is 82h for factory locked and 02h for not factory locked.
10. The data is 00h for an unprotected sector/sector block and 01h
for a protected sector/sector block.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
12. The Unlock Bypass Reset command is required to return to the
read mode when the bank is in the unlock bypass mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
14. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
15. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Command
Sequence
(Note 1)
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
Manufacturer ID
Word
4
555
AA
2AA
55
(BA)555
90
(BA)X00
01
Byte
AAA
555
(BA)AAA
Device ID
Word
4
555
AA
2AA
55
(BA)555
90
(BA)X01
(see
Table 7)
Byte
AAA
555
(BA)AAA
(BA)X02
SecSi
™ Sector Factory
Protect (Note 9)
Word
4
555
AA
2AA
55
(BA)555
90
(BA)X03
82/02
Byte
AAA
555
(BA)AAA
(BA)X06
Sector/Sector Block
Protect Verify
(Note 10)
Word
4
555
AA
2AA
55
(BA)555
90
(SA)X02
00/01
Byte
AAA
555
(BA)AAA
(SA)X04
Enter SecSi Sector Region
Word
3
555
AA
2AA
55
555
88
Byte
AAA
555
AAA
Exit SecSi Sector Region
Word
4
555
AA
2AA
55
555
90
XXX
00
Byte
AAA
555
AAA
Program
Word
4
555
AA
2AA
55
555
A0
PA
PD
Byte
AAA
555
AAA
Unlock Bypass
Word
3
555
AA
2AA
55
555
20
Byte
AAA
555
AAA
Unlock Bypass Program (Note 11)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 12)
2
BA
90
XXX
00
Chip Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Byte
AAA
555
AAA
AAA
555
AAA
Sector Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Byte
AAA
555
AAA
AAA
555
Erase Suspend (Note 13)
1
BA
B0
Erase Resume (Note 14)
1
BA
30
CFI Query (Note 15)
Word
1
55
98
Byte
AA


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