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FM16W08-SG Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # FM16W08-SG
Description  64-Kbit (8 K 횞 8) Wide Voltage Bytewide F-RAM Memory
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM16W08-SG Datasheet(HTML) 9 Page - Cypress Semiconductor

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FM16W08
Document Number: 001-86210 Rev. *F
Page 9 of 18
AC Switching Characteristics
Over the Operating Range
Parameters [2]
Description
VDD = 2.7 V to 3.0 V
VDD = 3.0 V to 5.5 V
Unit
Cypress
Parameter
Alt Parameter
Min
Max
Min
Max
SRAM Read Cycle
tCE
tACE
Chip enable access time
80
70
ns
tCA
Chip enable active time
80
70
ns
tRC
Read cycle time
145
130
ns
tPC
Pre-charge time
65
60
ns
tAS
tSA
Address setup time
0–
0–
ns
tAH
tHA
Address hold time
15
15
ns
tOE
tDOE
Output enable access time
15
12
ns
tHZ[3, 4]
tHZCE
Chip Enable to output HI-Z
15
15
ns
tOHZ[3, 4]
tHZOE
Output enable HIGH to output HI-Z
15
15
ns
Notes
2. Test conditions assume a signal transition time of 5 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 10% and 90% of VDD, output loading of the
specified IOL/IOH and load capacitance shown in AC Test Conditions on page 8.
3. tHZ and tOHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state.
4. This parameter is characterized but not 100% tested.


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