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2SK3078A Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3078A Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SK3078A 2002-01-09 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications · Output power: Po ≥ 28.0dBmW · Gain: Gp ≥ 8.0dB · Drain Efficiency: ηD ≥ 50% Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 10 V Gate-source voltage VGSS 5 V Drain current ID 0.5 A Power dissipation PD (Note 1) 3 W Channel temperature Tch 150 °C Storage temperature range Tstg −45~150 °C Note 1: Tc = 25°C Marking Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output power PO 28.0 ¾ ¾ dBmW Drain efficiency ηD 50 ¾ ¾ % Power gain Gp VDS = 4.5 V, Iidle = 50 mA (VGS = adjust) f = 470 MHz, Pi = 20dBmW ZG = ZL == 50 Ω 8.0 ¾ ¾ dB Threshold voltage Vth VDS = 4.8 V, ID = 0.5 mA 0.20 ¾ 1.20 V Drain cut-off current IDSS VDS = 10 V, VGS = 0 V ¾ ¾ 10 µA Gate-source leakage current IGSS VGS = 5 V, VDS = 0 V ¾ ¾ 5 µA Load mismatch (Note 2) ¾ VDS = 6.5 V, f = 470 MHz, Pi = 20dBmW, Po = 28.0dBmW (VGS = adjust) VSWR LOAD 10:1 all phase No degradation ¾ Caution: This transistor is the electrostatic sensitive device. Please handle with caution. Note 2: When the RF output power test fixture is used Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1D U W |
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