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NCP5355PDR2 Datasheet(PDF) 7 Page - ON Semiconductor

Part # NCP5355PDR2
Description  12 V Synchronous Buck Power MOSFET Driver
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP5355PDR2 Datasheet(HTML) 7 Page - ON Semiconductor

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NCP5355
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7
APPLICATIONS INFORMATION
Enable Pin
The Enable pin allows logic level On/Off control of the
NCP5355. A Logic Level Low (< 0.8 V) disables the part by
forcing both TG and BG low. Bringing both gates low
prevents the output voltage from ringing below ground at
turn−off. A Logic Level High (> 2.0 V) enables the part by
allowing CO to control TG and BG.
If the Enable function is not being used, the Enable pin
should be left unconnected. This will Enable the part by
default, as the Enable pin will be internally pulled high by
a 2.0
mA current. The maximum high voltage level is 5.0 V.
Voltages greater than this may damage the part.
Undervoltage Lockout
Gates TG and BG are both held low until Vs reaches the
UVLO Start Threshold of 8.0 V during startup. Vs
exceeding the UVLO threshold allows CO to take control of
both gates. If Vs falls below the UVLO Stop Threshold of
7.0 V, both gates are then forced low until Vs again exceeds
the Start Threshold.
Supply Capacitor Selection
A 1.0
mF ceramic capacitor (CVS in Figure 4) should be
located close to the Vs supply pins to provide peak current
and to reduce noise. A small 1.0
W to 5.0 W resistor (RVS in
Figure 4) may also be added in series with CVS to provide
additional filtering in noisy environments.
Bootstrap Capacitor Selection
The size of the Top MOSFET bootstrap capacitor (CBST
in Figure 4 ) is determined from the following equation:
CBST w
QTtopFETs
DVBST
where
QTtopFETs is the sum of the Top MOSFETs total gate
charge,
DVBST
is the maximum change in voltage across
the bootstrap capacitor and is typically
designed for a drop of less than a 1.0 V.
For example, a circuit using one Top MOSFET with a
typical QTtopFETs of 60 nC (at 12 V Vgs) and 1.0 V of droop
would give a minimum value for CBST of 60 nF.
Internal or External Bootstrap Diode
For convenience, a bootstrap diode is internally provided
by the NCP5355. This internal diode reduces system cost
and parts count.
However, this diode will have higher losses than a
standard small signal switching or Schottky diode. By using
an external Schottky diode (DBST in Figure 4) a small
improvement in efficiency can be achieved as illustrated by
the graph in Figure 5.
While the difference in efficiency is relatively small, this
difference represents heat loss in the driver and on average
driver temperature may be reduced by about 10
°C if using
an external diode. If an external diode is used, it should be
a
Schottky
or
switching
diode.
(For
example:
ON Semiconductor
Part
Number
BAT54HT1
or
BAS16HT1.)
Adaptive Nonoverlap
The NCP5355 includes adaptive nonoverlap protection to
prevent top and bottom MOSFET cross conduction.
When CO goes low signaling TG to turn off the top
MOSFET, BG does not go high until the switch node
(DRN pin) has fallen below 5.0 V and a fixed amount of
delay (tpdhBG) has elapsed. This ensures that the top
MOSFET is off before the bottom MOSFET is turned on.


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