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2SC1306 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 2 page 2SC1306 Silicon NPN Transistor Final RF Power Output Description: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. WINTransceiver B C E Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC Continuous Peak 3A 5A Collector Power Dissipation (TA = +25°C), PD 1.2W Collector Power Dissipation (TC = +50°C), PD 10W Operating Junction Temperature, TJ +150°C Storage Temperature Range, Tstg -55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 80 - - V Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 - - V Collector Cutoff Current ICBO VCB = 40V IE = 0 - - 10 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 10 µA DC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200 Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 V Base-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 V Current Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - MHz Output Capacitance Cob VCB = 10V, f = 1MHz 25 - - Power Output PO 4.0 - - W Collector Efficiency VCC = 12V, Pin = 0.2W, f = 27MHz 60 - - % |
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