2SC1306 datasheet(1/2 Pages) ETC

Part #	2SC1306

Description	Silicon NPN Transistor Final RF Power Output

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2SC1306

Silicon NPN Transistor

Final RF Power Output

Description:

The 2SC1306 is a silicon NPN transistor in a TO220 type

case designed for use in high power output amplifier

stages such as citizen band communications equipment.

WINTransceiver

B C E

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector-Emitter Voltage (RBE = 150 Ohm), VCER

75V

Collector-Base Voltage, VCBO

80V

Emitter-Base Voltage, VEBO

5V

Collector Current, IC

Continuous

Peak

3A

5A

Collector Power Dissipation (TA = +25°C), PD

1.2W

Collector Power Dissipation (TC = +50°C), PD

10W

Operating Junction Temperature, TJ

+150°C

Storage Temperature Range, Tstg

-55° to +150°C

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector-Base Breakdown Voltage

V(BR)CBO IC = 100µA, IB = 0

80

-

V

Collector-Emitter Breakdown Voltage

V(BR)CER IC = 1mA, RBE = 150 Ohm

75

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO IE = 100µA, IC = 0

5

-

V

Collector Cutoff Current

ICBO

VCB = 40V IE = 0

-

10

µA

Emitter Cutoff Current

IEBO

VEB = 4V, IC = 0

-

10

µA

DC Current Gain

hFE

VCE = 5V, IC = 0.5A

25

-

200

Collector-Emitter Saturation Voltage

VCE(sat) IC = 1A, IB = 0.1A

-

0.15 0.60

V

Base-Emitter Saturation Voltage

VBE(sat) IC = 1A, IB = 0.1A

-

0.9

1.2

V

Current Gain-Bandwidth Product

fT

VCE = 10V, IC = 0.1A

100 150

-

MHz

Output Capacitance

Cob

VCB = 10V, f = 1MHz

25

-

Power Output

PO

4.0

-

W

Collector Efficiency

VCC = 12V, Pin = 0.2W, f = 27MHz

60

-

%

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