Final Datasheet

4

V2.0

2017-12-18

IR MOSFET-StrongIRFET™

IRF100P219

Table 2

Parameter

Symbol

Values

Unit

Continuous Drain Current (Silicon Limited)

304

A

Continuous Drain Current (Silicon Limited)

215

Pulsed Drain Current 

780

Maximum Power Dissipation

341

W

Linear Derating Factor

2.3

W/°C

Gate-to-Source Voltage

± 20

V

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

-

300

Mounting Torque, 6-32 or M3 Screw

-

10 lbf·in (1.1 N·m)

-

Conditions

-

-

-

-

Continuous Drain Current (Package Limited)

195

Notes:



Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.

Note that Current limitations arising from heating of the device leads may occur with some lead mounting arrangements.

(Refer to AN-1140)



Repetitive rating; pulse width limited by max. junction temperature.







Pulse width  400µs; duty cycle  2%.









Pulse drain current is limited to 780A by source bonding technology.

Table 4

Avalanche characteristics

Parameter

Symbol

Values

Unit

Single Pulse Avalanche Energy 

464

mJ

Avalanche Current 

See Fig 16, 17, 23a, 23b

A

Repetitive Avalanche Energy 

mJ

Table 3

Thermal characteristics

Parameter

Symbol

Conditions

Typ.

Max.

Unit

Junction-to-Case 

-

0.44

°C/W

Case-to-Sink, Flat Greased Surface

-

0.24

-

Junction-to-Ambient

-

-

40

Min.

-

-

-

2

Maximum ratings and thermal characteristics

Maximum ratings and thermal characteristics