●

●

●

▲

◀

●

●

●

▲

◀

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

Drain to Source Voltage

60

V

50

A

35.2

A

Drain Current Pulsed

(Note 1)

200

A

Gate to Source Voltage

V

Single Pulsed Avalanche Energy

(Note 2)

470

mJ

Repetitive Avalanche Energy

(Note 1)

13

mJ

Avalnche Current

(Note 1)

50

A

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

7V/ns

130

W

Derating Factor above 25 °C

0.87

W/°C

Operating Junction Temperature & Storage Temperature

- 55 ~ 175

°C

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

Min.

Typ.

Max.

Thermal Resistance, Junction-to-Case

-

-

1.15

°C/W

Thermal Resistance, Case to Sink

-

0.5

-

°C/W

Thermal Resistance, Junction-to-Ambient

-

-

62.5

°C/W

SFP50N06

December, 2002. Rev. 1.

1/7

Features

■

■

Low Gate Charge (Typical 39nC)

■

Low Crss (Typical 110pF)

■

Improved dv/dt Capability

■

100% Avalanche Tested

■

Maximum Junction Temperature Range (175°C)

General Description

This Power MOSFET is produced using SemiWell’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a low

gate charge with superior switching performance, and rugged

avalanche characteristics. This Power MOSFET is well suited

for synchronous DC-DC Converters and Power Management in

portable and battery operated products.

N-Channel MOSFET

Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

Symbol

2. Drain

3. Source

1. Gate

TO-220

1 2

3