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IRFP4768PBF Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IRFP4768PBF Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 9 page IRFP4768PbF 4 2016-12-12 Fig 8. Maximum Safe Operating Area Fig 11. Typical Coss Stored Energy Fig 7. Typical Source-Drain Diode Forward Voltage Fig 12. Maximum Avalanche Energy vs. Drain Current Fig 10. Drain-to–Source Breakdown Voltage 0.0 0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) Tc = 25°C Tj = 175°C Single Pulse 100µsec 1msec 10msec DC -60 -40 -20 0 20 40 60 80 100 120140160 180 TJ , Temperature ( °C ) 240 260 280 300 320 Id = 5mA 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 0 400 800 1200 1600 2000 2400 2800 3200 ID TOP 12A 17A BOTTOM 56A -50 0 50 100 150 200 250 300 VDS, Drain-to-Source Voltage (V) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 Fig 9. Maximum Drain Current vs. Case Temperature 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0 20 40 60 80 100 |
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