SFH3100F datasheet(2/9 Pages) OSRAM

Part #	SFH3100F

Description	Silicon NPN Phototransistor with Daylight - Cutoff Filter Version 1.5

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Manufacturer	OSRAM [OSRAM GmbH]

Direct Link	http://www.osram.com

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2016-01-04

2

Version 1.5

SFH 3100 F

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter

Symbol

Values

Unit

Operating and storage temperature range

T

op; Tstg

-40 ... 85

°C

Collector-emitter voltage

V

CE

35

V

Collector current

I

C

50

mA

Collector surge current

(τ < 10 µs)

I

CS

100

mA

Emitter-collector voltage

VEC

7

V

Total Power dissipation

Ptot

150

mW

Thermal resistance junction - ambient

RthJA

280

K/W

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

2000

V

Parameter

Symbol

Values

Unit

Wavelength of max. sensitivity

(typ)

λ

S max

920

nm

Spectral range of sensitivity

(typ)

λ

10%

(typ) 850

... 1100

nm

Radiant sensitive area

(typ)

A

0.11

mm

2

Dimensions of chip area

(typ)

L x W

(typ) 0.55 x

0.55

mm x

mm

Half angle

(typ)

ϕ

± 14

°

Capacitance

(V

CE = 0 V, f = 1 MHz, E = 0)

(typ)

CCE

7.5

pF

Capacitance

(V

CE = 5 V, f = 1 MHz, E = 0)

(typ)

C

CE

4

pF

Photocurrent

(λ = 950 nm, Ee = 0.5 mW/cm

2, V

CE = 5 V)

I

PCE

≥ 0.4

µA

Dark current

(VCE = 20 V, E = 0)

(typ (max)) ICE0

1 (≤ 50)

nA

Rise and fall time

(I

C = 1 mA, VCC = 5 V, RL = 1 kΩ)

(typ)

tr, tf

7 , 9

µs

Collector-emitter saturation voltage

(Threefold saturated)

(typ (max)) V

CEsat

140 (≤ 400)

mV

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