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PESD5V0S2BT Datasheet(PDF) 5 Page - NXP Semiconductors |
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PESD5V0S2BT Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 11 page 9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 27 May 2004 5 of 11 Philips Semiconductors PESD5V0S2BT Low capacitance bi-directional double ESD protection diode Tamb = 25 °C; f = 1 MHz. IR < 1 nA measured at Tamb = 25 °C. Fig 5. Diode capacitance as a function of reverse voltage; typical values. Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values. VR (V) 05 4 23 1 001aaa634 30 26 34 38 Cd (pF) 22 001aaa635 Tj (°C) 75 150 125 100 10 1 102 10−1 IR IR(85 °C) |
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