BS62UV2006SI datasheet(3/9 Pages) BSI

Part #	BS62UV2006SI

Description	Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	BSI [Brilliance Semiconductor]

Direct Link

Logo

3 / 9 page

R0201-BS62UV2006

Revision 1.1

Jan.

2004

3

BSI

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

VDR

Vcc for Data Retention

CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

1.0

--

V

ICCDR

(3)

Data Retention Current

CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

--

0.1

1.0

uA

tCDR

Chip Deselect to Data

Retention Time

0

--

ns

tR

Operation Recovery Time

See Retention Waveform

TRC

(2)

--

ns

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/t

RC .

4. IccsB1 is 2.0uA/3.0uA at Vcc=2.0V/3.0V and TA=70oC.

5. VIL = -1.5V for pulse width less than 30ns.

DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )

1. Vcc = 1.0V, TA = + 25OC

2. t

RC = Read Cycle Time

3. IccDR is 0.7uA at TA=70oC.

DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )

LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )

CE1

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIH

Vcc

VDR

1.0V

≥

CE1

Vcc - 0.2V

≥

LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )

CE2

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIL

Vcc

VDR ≧ 1.0V

CE2 ≦ 0.2V

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

Vcc=2.0V

--

0.6

VIL

Guaranteed Input Low

Voltage

(2)

Vcc=3.0V

-0.3

(5)

--

0.8

V

Vcc=2.0V

1.4

--

VIH

Guaranteed Input High

Voltage

(2)

Vcc=3.0V

2.0

--

Vcc+0.3

V

IIL

Input Leakage Current

Vcc = Max, VIN = 0V to Vcc

--

1

uA

ILO

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2=VIL

or OE = VIH, VI/O = 0V to Vcc

--

1

uA

Vcc = Max, IOL = 0.1mA

Vcc=2.0V

--

0.2

VOL

Output Low Voltage

Vcc = Max, IOL = 2.0mA

Vcc=3.0V

--

0.4

V

Vcc = Min, IOH = -0.1mA

Vcc=2.0V

Vcc-0.2

--

VOH

Output High Voltage

Vcc = Min, IOH = -1.0mA

Vcc=3.0V

2.4

--

V

Vcc=2.0V

--

10

ICC

Operating Power Supply

Current

Vcc = Max, CE1= VIL, CE2=VIH

IDQ = 0mA, F = Fmax

(3)

Vcc=3.0V

--

13

mA

Vcc=2.0V

--

0.1

ICCSB

Standby Current-TTL

Vcc = Max, CE1 = VIH or

CE2=VIL

IDQ = 0mA

Vcc=3.0V

--

0.5

mA

Vcc=2.0V

--

0.20

3.0

ICCSB1

(4)

Standby Current-CMOS

Vcc = Max, CE1≧Vcc-0.2V or

CE2≦0.2V ;VIN≧ Vcc - 0.2V or

VIN≦0.2V

Vcc=3.0V

--

0.30

5.0

uA

BS62UV2006

Similar Part No. - BS62UV2006SI

Manufacturer	Part #	Datasheet	Description
Brilliance Semiconducto...	BS62UV2001	282Kb / 10P	Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
	BS62UV2001SC	282Kb / 10P	Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
	BS62UV2001SI	282Kb / 10P	Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
	BS62UV2001STC	282Kb / 10P	Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
	BS62UV2001STI	282Kb / 10P	Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit

More results

Similar Description - BS62UV2006SI

Manufacturer	Part #	Datasheet	Description
Brilliance Semiconducto...	BS62UV2001	282Kb / 10P	Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
AMIC Technology	LP62S2048-I	190Kb / 17P	256K X 8 BIT LOW VOLTAGE CMOS SRAM
	LP62S2048-T	190Kb / 17P	256K X 8 BIT LOW VOLTAGE CMOS SRAM
	LP62S2048A-T	190Kb / 17P	256K X 8 BIT LOW VOLTAGE CMOS SRAM
	LP62S2048A-I	202Kb / 18P	256K X 8 BIT LOW VOLTAGE CMOS SRAM
	LP62S2048A-T	250Kb / 18P	256K X 8 BIT LOW VOLTAGE CMOS SRAM
	A62S8308	278Kb / 17P	256K X 8 BIT LOW VOLTAGE CMOS SRAM
	LP62S2048A-I	190Kb / 17P	256K X 8 BIT LOW VOLTAGE CMOS SRAM
Mosel Vitelic, Corp	V62C2802048L	94Kb / 10P	Ultra Low Power 256K x 8 CMOS SRAM
Mosel Vitelic, Corp	V62C1802048L	84Kb / 9P	Ultra Low Power 256K x 8 CMOS SRAM

More results

BS62UV2006SI Datasheet(PDF) 3 Page - Brilliance Semiconductor

BS62UV2006SI Datasheet(HTML) 3 Page - Brilliance Semiconductor

Similar Part No. - BS62UV2006SI

Similar Description - BS62UV2006SI

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL