Electronic Components Datasheet Search |
|
AS58C1001F-25XT Datasheet(PDF) 3 Page - Austin Semiconductor |
|
AS58C1001F-25XT Datasheet(HTML) 3 Page - Austin Semiconductor |
3 / 19 page EEPROM AS58C1001 Austin Semiconductor, Inc. AS58C1001 Rev. 4.0 3/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 FUNCTIONAL DESCRIPTION AUTOMATIC PAGE WRITE The Page Write feature allows 1 to 128 Bytes of data to be written into the EEPROM in a single cycle and allows the undefined data within 128 Bytes to be written corresponding to the undefined address (A 0 to A 6 ). Loading the first Byte of data, the data load window of 30 µs opens for the second. In the same manner each additional Byte of data can be loaded within 30 µs. In case CE\ and WE\ are kept high for 100µs after data input, the EEPROM enters erase and write automatically and only the input data can be written into the EEPROM. In Page mode the data can be written and accessed 10 4 times per page, and in Byte mode 103 times per Byte. DATA\ POLLING Data\ Polling allows the status of the EEPROM to be determined. If the EEPROM is set to Read mode during a Write cycle, and inversion of the last Byte of data to be loaded outputs from I/O, to indicate that the EEPROM is performing a Write operation. WRITE PROTECTION (1) Noise protection: Noise on a write cycle will not act as a trigger with a WE\ pulse of less than 20ns. (2) Write inhibit: Holding OE\ low, WE\ high or CE\ high, inhibits a write cycle during power on/off. WE\ AND CE\ PIN OPERATION During a write cycle, addresses are latched by the falling edge of WE\ or CE\, and data is latched by the rising edge of WE\ or CE\. WRITE/ERASE ENDURANCE AND DATA RETENTION The endurance with page programming is 10 4 cycles (1% cumulative failure rate) and the data retention time is more than 10 years when a device is programmed less than 10 4 cycles. RDY/Busy\ SIGNAL RDY/Busy\ signal also allows status of the EEPROM to be determined. The RDY/Busy\ signal has high impedance except in write cycle and is lowered to V OL after the first write signal. At the end of the write cycle, the RDY/Busy\ signal changes state to high impedance. This allows many 58C1001 devices RDY/Busy\ signal lines to be wired-OR together. PROGRAMMING/ERASE The 58C1001 does NOT employ a BULK-erase function. The memory cells can be programmed ‘0’ or ‘1’. A write cycle performs the function of erase & write on every cycle with the erase being transparent to the user. The internal erase data state is considered to be ‘1’. To program the memory array with background of ALL 0’s or All 1’s, the user would program this data using the page mode write operation to program all 1024 128-byte pages. DATA PROTECTION To protect the data during operation and power on/off, the AS58C1001 has: 1. Data protection against Noise on Control Pins (CE\, OE\, WE\) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenom- enon, the AS58C1001 has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins. |
Similar Part No. - AS58C1001F-25XT |
|
Similar Description - AS58C1001F-25XT |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |