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MTB010N06RJ3-0-T3-G Datasheet(PDF) 2 Page - Cystech Electonics Corp.

Part # MTB010N06RJ3-0-T3-G
Description  N-Channel Enhancement Mode Power MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB010N06RJ3-0-T3-G Datasheet(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C016J3
Issued Date : 2018.04.11
Revised Date : 2018.04.12
Page No. : 2/ 9
MTB010N06RJ3
CYStek Product Specification
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage (Note 1)
VDS
60
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @TC=25
°C, VGS=10V
(Note 1)
43
Continuous Drain Current @TC=100
°C, VGS=10V
(Note 1)
ID
30.4
Continuous Drain Current @TA=25
°C, VGS=10V
(Note 4)
9.8
Continuous Drain Current @TA=70
°C, VGS=10V
(Note 4)
IDSM
7.8
Pulsed Drain Current @ VGS=10V
(Note 3)
IDM
172
Avalanche Current
(Note 3)
IAS
32
A
Single Pulse Avalanche Energy @ L=0.1mH, ID=32A, VDD=30V
(Note 2&5)
EAS
51
Repetitive Avalanche Energy
(Note 3)
EAR
5
mJ
TC=25
°C
(Note 1)
50
TC=100
°C
(Note 1)
PD
25
TA=25
°C
(Note 4)
3
Power Dissipation
TA=70
°C
(Note 4)
PDSM
0.96
W
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
3
50 (Note 4)
Thermal Resistance, Junction-to-ambient, max
RθJA
110
°C/W
Note : 1
.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the user’s specific board design.
3
. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any
given application depends on the user’s specific board design.
5. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=10A, VDD=30V


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