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MTB010N06RJ3-0-T3-G Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTB010N06RJ3-0-T3-G Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C016J3 Issued Date : 2018.04.11 Revised Date : 2018.04.12 Page No. : 2/ 9 MTB010N06RJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage (Note 1) VDS 60 Gate-Source Voltage VGS ±20 V Continuous Drain Current @TC=25 °C, VGS=10V (Note 1) 43 Continuous Drain Current @TC=100 °C, VGS=10V (Note 1) ID 30.4 Continuous Drain Current @TA=25 °C, VGS=10V (Note 4) 9.8 Continuous Drain Current @TA=70 °C, VGS=10V (Note 4) IDSM 7.8 Pulsed Drain Current @ VGS=10V (Note 3) IDM 172 Avalanche Current (Note 3) IAS 32 A Single Pulse Avalanche Energy @ L=0.1mH, ID=32A, VDD=30V (Note 2&5) EAS 51 Repetitive Avalanche Energy (Note 3) EAR 5 mJ TC=25 °C (Note 1) 50 TC=100 °C (Note 1) PD 25 TA=25 °C (Note 4) 3 Power Dissipation TA=70 °C (Note 4) PDSM 0.96 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 3 50 (Note 4) Thermal Resistance, Junction-to-ambient, max RθJA 110 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3 . Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. 5. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=10A, VDD=30V |
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