2N3792 datasheet(1/2 Pages) MICROSEMI

Part #	2N3792

Description	PNP HIGH POWER SILICON TRANSISTOR

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA

PNP HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/379

Devices

Qualified Level

2N3791

2N3792

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

2N3791

2N3792

Unit

Collector-Emitter Voltage

VCEO

60

80

Vdc

Collector-Base Voltage

VCBO

60

80

Vdc

Emitter-Base Voltage

VEBO

7.0

Vdc

Base Current

IB

4.0

Adc

Collector Current

IC

10

Adc

Total Power Dissipation

@ TA = +25

0C (1)

@ TC = +100

0C (2)

PT

5.0

85.7

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

1.17

0C/W

1)

Derate linearly @ 28.57 mW/

0C for TA > +250C

2)

Derate linearly @ 0.857 mW/

0C for TC > +1000C

TO-3*

(TO-204AA)

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (TC = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 10 mAdc

2N3791

2N3792

V(BR)CEO

60

80

Vdc

Collector-Emitter Cutoff Current

VCE = 50 Vdc

2N3791

VCE = 70 Vdc

2N3792

ICES

5.0

mAdc

Collector-Emitter Cutoff Current

VCE = 60 Vdc, VBE = 1.5 Vdc

2N3791

VCE = 80 Vdc, VBE = 1.5 Vdc

2N3792

ICEX

5.0

mAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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