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19MT050XF Datasheet(PDF) 1 Page - International Rectifier |
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19MT050XF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page 1 19MT050XF Bulletin I27128 Rev.C 07/03 Absolute Maximum Ratings ID Continuos Drain Current @ VGS = 10V @ TC = 25°C 31 A @ TC = 100°C 19 IDM Pulsed Drain Current (1) 124 PD Maximum Power Dissipation @ TC = 25°C 1140 W @ TC = 100°C 456 VGS Gate-to-Source Voltage ± 30 V VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 dv/dt Peak Diode Recovery dv/dt (3) 15 V/ ns Parameters Max Units HEXFET® Power MOSFET Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current Aluminum Nitride DBC Very Low Stray Inductance Design for HighSpeedOperation Features "FULL-BRIDGE" FREDFET MTP Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Low Trr and Soft Diode Reverse Recovery Optimized for Welding, UPS and SMPS Applications Outstanding ZVS and High Frequency Operation Direct Mounting to Heatsink PCB Solderable Terminals VeryLowJunction-to-CaseThermalResistance ULApprovedE78996 Benefits MMTP www.irf.com 31 A VDSS = 500V |
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