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BGF1901-10 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BGF1901-10 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 11 page 2004 Oct 11 7 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 APPLICATION INFORMATION handbook, halfpage TEMPERATURE COMPENSATED GATE BIAS C1 C3 C5 R1 L1 C2 C4 + VS 50 Ω output 50 Ω input MBL781 Z1 Z2 Fig.10 Test circuit. List of components (see Figs 10 and 11) Note 1. The striplines are on a double copper-clad printed-circuit board (RO5880) with εr = 2.2 and thickness = 0.79 mm. COMPONENT DESCRIPTION VALUE CATALOGUE NUMBER C1, C3 multilayer X7R ceramic chip capacitor 100 nF; 50 V C2, C5 tantalum SMD capacitor 10 µF; 35 V C4 electrolytic capacitor 100 µF; 35 V L1 grade 4S2 Ferroxcube bead 4330 030 36300 R1 metal film resistor 10 Ω; 0.4 W 2322 195 13109 Z1, Z2 stripline; note 1 50 Ω |
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