Philips Semiconductors

BUK71/7905-40AIE

TrenchPLUS standard level FET

Product data

Rev. 04 — 6 February 2004

9 of 16

9397 750 12341

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

Fig 15. Drain-sense current ratio as a function of

gate-source voltage; typical values.

gate-source voltage; typical values.

03ni90

0

25

50

75

100

0246

VGS (V)

ID

(A)

175

°C

Tj = 25 °C

03ni26

0

2

4

6

8

10

0

20406080100

120

QG (nC)

VGS

(V)

VDS = 14 V

32 V

03nn69

400

450

500

550

600

4

8

12

16

20

VGS (V)

ID/Isense

03nk33

0

1

2

3

4

46

8

10

RD(Is)on

(

Ω)

VGS (V)