SZNUD3160DMT1G datasheet(6/10 Pages) ONSEMI

Part #	SZNUD3160DMT1G

Description	Industrial Inductive Load Driver

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Manufacturer	ONSEMI [ON Semiconductor]

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NUD3160, SZNUD3160

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TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise specified)

Figure 4. Drain−to−Source Leakage vs.

Junction Temperature

Figure 5. Gate−to−Source Leakage vs.

Junction Temperature

Figure 6. Breakdown Voltage vs.

Junction Temperature

TJ, JUNCTION TEMPERATURE (°C)

75

50

25

0

−25

−50

0

10

20

30

40

50

80

100

50

25

0

−25

−50

20

30

40

50

60

70

80

Figure 7. Output Characteristics

TJ, JUNCTION TEMPERATURE (°C)

125

50

0

−25

−50

65.0

65.2

65.4

65.8

66.0

66.4

125

100

75

125

VGS = 5 V

VGS = 3 V

25

100

75

65.6

64.8

ID = 10 mA

Figure 8. Transfer Function

VDS = 60 V

Figure 9. On Resistance Variation vs

Junction Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

0.7

0.5

0.4

0.3

0.2

0.0

1E−03

1E−02

1E−01

1E+00

1E+01

1E+03

0.1

0.6

0.8

VGS = 5 V

VGS = 3 V

60

VGS = 2 V

VGS = 2.5 V

VGS = 1.5 V

VGS, GATE−TO−SOURCE VOLTAGE (V)

2.6

2.0

1.8

1.6

1.4

1.0

1E−07

1E−05

1E−06

1E−04

0.1

1

1.2

2.4

125 °C

2.2

0.001

0.01

85 °C

25 °C −40 °C

VDS = 0.8 V

TJ, JUNCTION TEMPERATURE (°C)

75

50

25

0

−25

−50

800

1200

1600

2000

2400

2800

125

100

ID = 0.15 A

3200

VGS = 5.0 V

VGS = 3.0 V

70

66.2

1E+02

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