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1N1188AR Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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1N1188AR Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 50 V - 600 V IF = 40 A Features • High Surge Capability DO-5 Package • Types up to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol 1N1183A(R) 1N1184A(R) 1N1188A(R) 1N1190A(R) Unit Repetitive peak reverse V 50 100 400 600 V 2. Reverse polarity (R): Stud is anode. Conditions 1N1183A thru 1N1190AR 200 1N1186A(R) Maximum ratings, at Tj = 25 °C, unless otherwise specified Silicon Standard Recovery Diode voltage VRRM 50 100 400 600 V RMS reverse voltage VRMS 35 70 280 420 V DC blocking voltage VDC 50 100 400 600 V Continuous forward current IF 40 40 40 40 A Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol 1N1183A(R) 1N1184A(R) 1N1188A(R) 1N1190A(R) Unit Diode forward voltage 1.1 1.1 1.1 1.1 10 10 10 10 μA 15 15 15 15 mA Thermal characteristics Thermal resistance, junction - case RthJC 1.25 1.25 1.25 1.25 °C/W 10 1N1186A(R) 1.25 VR = 50 V, Tj = 140 °C 1.1 VR = 50 V, Tj = 25 °C IF = 40 A, Tj = 25 °C TC ≤ 150 °C Conditions 200 140 800 800 -55 to 150 40 200 A 800 Reverse current IR VF 800 800 -55 to 150 TC = 25 °C, tp = 8.3 ms Surge non-repetitive forward current, Half Sine Wave IF,SM Electrical characteristics, at Tj = 25 °C, unless otherwise specified V 15 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 |
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