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ISL6613BIRZ Datasheet(PDF) 9 Page - Renesas Technology Corp |
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ISL6613BIRZ Datasheet(HTML) 9 Page - Renesas Technology Corp |
9 / 12 page ISL6612B, ISL6613B FN9205 Rev.4.00 Page 9 of 12 May 1, 2012 desired frequency for the selected MOSFETs. The total gate drive power losses due to the gate charge of MOSFETs and the driver’s internal circuitry and their corresponding average driver current can be estimated with Equations 2 and 3, respectively, where the gate charge (QG1 and QG2) is defined at a particular gate to source voltage (VGS1and VGS2) in the corresponding MOSFET datasheet; IQ is the driver’s total quiescent current with no load at both drive outputs; NQ1 and NQ2 are the number of upper and lower MOSFETs, respectively; UVCC and LVCC are the drive voltages for both upper and lower FETs, respectively. The IQ*VCC product is the quiescent power of the driver without capacitive load and is typically 116mW at 300kHz. The total gate drive power losses are dissipated among the resistive components along the transition path. The drive resistance dissipates a portion of the total gate drive power losses, the rest will be dissipated by the external gate resistors (RG1 and RG2) and the internal gate resistors (RGI1 and RGI2) of MOSFETs. Figures 3 and 4 show the typical upper and lower gate drives turn-on transition path. The power dissipation on the driver can be roughly estimated as: Layout Considerations For heat spreading, place copper underneath the IC whether it has an exposed pad or not. The copper area can be extended beyond the bottom area of the IC and/or connected to buried copper plane(s) with thermal vias. This combination of vias for vertical heat escape, extended copper plane, and buried planes for heat spreading allows the IC to achieve its full thermal potential. Place each channel power component as close to each other as possible to reduce PCB copper losses and PCB parasitics: shortest distance between DRAINs of upper FETs and SOURCEs of lower FETs; shortest distance between DRAINs of lower FETs and the power ground. Thus, smaller amplitudes of positive and negative ringing are on the switching edges of the PHASE node. However, some space in between the power components is required for good airflow. The traces from the drivers to the FETs should be kept short and wide to reduce the inductance of the traces and to promote clean drive signals. PQg_TOT PQg_Q1 PQg_Q2 IQ VCC ++ = (EQ. 2) PQg_Q1 QG1 UVCC2 VGS1 --------------------------------------- FSW NQ1 = PQg_Q2 QG2 LVCC2 VGS2 -------------------------------------- FSW NQ2 = IDR QG1 UVCC NQ1 VGS1 ------------------------------------------------------ QG2 LVCC NQ2 VGS2 ----------------------------------------------------- + FSW IQ + = (EQ. 3) PDR PDR_UP PDR_LOW IQ VCC ++ = (EQ. 4) PDR_UP RHI1 RHI1 REXT1 + -------------------------------------- RLO1 RLO1 REXT1 + ---------------------------------------- + PQg_Q1 2 --------------------- = PDR_LOW RHI2 RHI2 REXT2 + -------------------------------------- RLO2 RLO2 REXT2 + ---------------------------------------- + PQg_Q2 2 --------------------- = REXT1 RG1 RGI1 NQ1 ------------- + = REXT2 RG2 RGI2 NQ2 ------------- + = FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH Q1 D S G RGI1 RG1 BOOT RHI1 CDS CGS CGD RLO1 PHASE UVCC LVCC Q2 D S G RGI2 RG2 RHI2 CDS CGS CGD RLO2 |
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