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ISL6613BIRZ Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # ISL6613BIRZ
Description  Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL6613BIRZ Datasheet(HTML) 9 Page - Renesas Technology Corp

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ISL6612B, ISL6613B
FN9205 Rev.4.00
Page 9 of 12
May 1, 2012
desired frequency for the selected MOSFETs. The total gate
drive power losses due to the gate charge of MOSFETs and
the driver’s internal circuitry and their corresponding average
driver current can be estimated with Equations 2 and 3,
respectively,
where the gate charge (QG1 and QG2) is defined at a particular
gate to source voltage (VGS1and VGS2) in the corresponding
MOSFET datasheet; IQ is the driver’s total quiescent current
with no load at both drive outputs; NQ1 and NQ2 are the
number of upper and lower MOSFETs, respectively; UVCC
and LVCC are the drive voltages for both upper and lower
FETs, respectively. The IQ*VCC product is the quiescent power
of the driver without capacitive load and is typically 116mW at
300kHz.
The total gate drive power losses are dissipated among the
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate resistors
(RG1 and RG2) and the internal gate resistors (RGI1 and RGI2)
of MOSFETs. Figures 3 and 4 show the typical upper and
lower gate drives turn-on transition path. The power dissipation
on the driver can be roughly estimated as:
Layout Considerations
For heat spreading, place copper underneath the IC whether it
has an exposed pad or not. The copper area can be extended
beyond the bottom area of the IC and/or connected to buried
copper plane(s) with thermal vias. This combination of vias for
vertical heat escape, extended copper plane, and buried
planes for heat spreading allows the IC to achieve its full
thermal potential.
Place each channel power component as close to each other
as possible to reduce PCB copper losses and PCB parasitics:
shortest distance between DRAINs of upper FETs and
SOURCEs of lower FETs; shortest distance between DRAINs
of lower FETs and the power ground. Thus, smaller amplitudes
of positive and negative ringing are on the switching edges of
the PHASE node. However, some space in between the power
components is required for good airflow. The traces from the
drivers to the FETs should be kept short and wide to reduce the
inductance of the traces and to promote clean drive signals.
PQg_TOT
PQg_Q1 PQg_Q2 IQ VCC
++
=
(EQ. 2)
PQg_Q1
QG1 UVCC2
VGS1
--------------------------------------- FSW
NQ1
=
PQg_Q2
QG2 LVCC2
VGS2
-------------------------------------- FSW
NQ2
=
IDR
QG1 UVCC NQ1
VGS1
------------------------------------------------------
QG2 LVCC NQ2
VGS2
-----------------------------------------------------
+



FSW IQ
+
=
(EQ. 3)
PDR
PDR_UP PDR_LOW IQ VCC
++
=
(EQ. 4)
PDR_UP
RHI1
RHI1 REXT1
+
--------------------------------------
RLO1
RLO1 REXT1
+
----------------------------------------
+


 PQg_Q1
2
---------------------
=
PDR_LOW
RHI2
RHI2 REXT2
+
--------------------------------------
RLO2
RLO2 REXT2
+
----------------------------------------
+


 PQg_Q2
2
---------------------
=
REXT1
RG1
RGI1
NQ1
-------------
+
=
REXT2
RG2
RGI2
NQ2
-------------
+
=
FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
Q1
D
S
G
RGI1
RG1
BOOT
RHI1
CDS
CGS
CGD
RLO1
PHASE
UVCC
LVCC
Q2
D
S
G
RGI2
RG2
RHI2
CDS
CGS
CGD
RLO2


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