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ISL6268CAZ-T Datasheet(PDF) 8 Page - Renesas Technology Corp

Part # ISL6268CAZ-T
Description  High-Performance Notebook PWM Controller
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL6268CAZ-T Datasheet(HTML) 8 Page - Renesas Technology Corp

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ISL6268
FN6348 Rev 0.00
Page 8 of 14
Aug 22, 2006
The ISL6268 has internal gate-drivers for the high-side and
low-side N-Channel MOSFETs. The LG gate-driver is
optimized for low duty-cycle applications where the low-side
MOSFET conduction losses are dominant, requiring a low
r DS(on) MOSFET. The LG pull-down resistance is small in
order to clamp the gate of the MOSFET below the VGS(th) at
turn-off. The current transient through the gate at turnoff can be
considerable because the switching charge of a low r DS(on)
MOSFET can be large. Adaptive shoot-through protection
prevents a gate-driver output from turning on until the opposite
gate-driver output has fallen below approximately 1V. The
dead-time shown in Figure 4 is extended by the additional
period that the falling gate voltage stays above the 1V
threshold. The high-side gate-driver output voltage is
measured across the UG and PHASE pins while the low-side
gate-driver output voltage is measured across the LG and
PGND pins. The power for the LG gate-driver is sourced
directly from the PVCC pin. The power for the UG gate-driver is
sourced from a “boot” capacitor connected across the BOOT
and PHASE pins. The boot capacitor is charged from a 5V bias
supply through a “boot diode” each time the low-side MOSFET
turns on, pulling the PHASE pin low. The ISL6268 has an
integrated boot diode connected from the PVCC pin to the
BOOT pin.
Diode Emulation
The ISL6268 normally operates in continuous conduction
mode (CCM), minimizing conduction losses by forcing the low-
side MOSFET to operate as a synchronous rectifier. An
improvement in light-load efficiency is achieved by allowing the
converter to operate in diode-emulation-mode (DEM), where
the low-side MOSFET behaves as a smart-diode, forcing the
device to block negative inductor current flow. Positive-going
inductor current flows from either the source of the high-side
MOSFET, or the drain of the low-side MOSFET. Negative-
going inductor current usually flows into the drain of the low-
side MOSFET. When the low-side MOSFET conducts positive
inductor current, the phase voltage will be negative with
respect to the GND and PGND pins. Conversely, when the
low-side MOSFET conducts negative inductor current, the
phase voltage will be positive with respect to the GND and
PGND pins. Negative inductor current occurs when the output
load current is less than half the inductor ripple current. Sinking
negative inductor through the low-side MOSFET lowers
efficiency through unnecessary conduction losses. Efficiency
can be further improved with a reduction of unnecessary
switching losses by reducing the PWM frequency. It is
characteristic of the R3 architecture for the PWM frequency to
decrease while in diode emulation. The extent of the frequency
reduction is proportional to the reduction of load current. Upon
entering DEM, the PWM frequency makes an initial step-
reduction because of a 33% step-increase of the window
voltage VW. The converter will automatically enter DEM after
the PHASE pin has detected positive voltage, while the LG
gate-driver pin is high, for eight consecutive PWM pulses. The
converter will return to CCM on the following cycle after the
PHASE pin detects negative voltage, indicating that the body
diode of the low-side MOSFET is conducting positive inductor
current.
Overcurrent and Short Circuit Protection
The overcurrent protection (OCP) and short circuit protection
(SCP) setpoint is programmed with resistor RSEN that is
connected across the ISEN and PHASE pins. The PHASE pin
is connected to the drain terminal of the low-side MOSFET.
The SCP setpoint is internally set to twice the OCP setpoint.
When an OCP or SCP fault is detected, the PGOOD pin will
pull down to 32
and latch off the converter. The fault will
remain latched until the EN pin has been pulled below the
falling EN threshold voltage VENTHF or if VCC has decayed
below the falling POR threshold voltage VVCC_THF.
The OCP circuit does not directly detect the DC load current
leaving the converter. The OCP circuit detects the peak of
positive-flowing output inductor current. The low-side MOSFET
drain current ID is assumed to be equal to the positive output
inductor current when the high-side MOSFET is off. The
inductor current develops a negative voltage across the
r DS(on) of the low-side MOSFET that is measured shortly after
the LG gate-driver output goes high. The ISEN pin sources the
OCP sense current ISEN, through the OCP programming
resistor RSEN, forcing the ISEN pin to 0V with respect to the
GND pin. The negative voltage across the PHASE and GND
pins is nulled by the voltage dropped across RSEN as ISEN
conducts through it. An OCP fault occurs if ISEN rises above
TABLE 1. PGOOD PULL-DOWN RESISTANCE
CONDITION
PGOOD RESISTANCE
VCC below POR
Undefined
Soft Start or Undervoltage
95
Overvoltage
63
Overcurrent
32
FIGURE 4. LG AND UG DEAD-TIME
UG
LG
50%
50%
tLGFUGR
tUGFLGR


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