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ISL6268CAZ-T Datasheet(PDF) 8 Page - Renesas Technology Corp |
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ISL6268CAZ-T Datasheet(HTML) 8 Page - Renesas Technology Corp |
8 / 14 page ISL6268 FN6348 Rev 0.00 Page 8 of 14 Aug 22, 2006 The ISL6268 has internal gate-drivers for the high-side and low-side N-Channel MOSFETs. The LG gate-driver is optimized for low duty-cycle applications where the low-side MOSFET conduction losses are dominant, requiring a low r DS(on) MOSFET. The LG pull-down resistance is small in order to clamp the gate of the MOSFET below the VGS(th) at turn-off. The current transient through the gate at turnoff can be considerable because the switching charge of a low r DS(on) MOSFET can be large. Adaptive shoot-through protection prevents a gate-driver output from turning on until the opposite gate-driver output has fallen below approximately 1V. The dead-time shown in Figure 4 is extended by the additional period that the falling gate voltage stays above the 1V threshold. The high-side gate-driver output voltage is measured across the UG and PHASE pins while the low-side gate-driver output voltage is measured across the LG and PGND pins. The power for the LG gate-driver is sourced directly from the PVCC pin. The power for the UG gate-driver is sourced from a “boot” capacitor connected across the BOOT and PHASE pins. The boot capacitor is charged from a 5V bias supply through a “boot diode” each time the low-side MOSFET turns on, pulling the PHASE pin low. The ISL6268 has an integrated boot diode connected from the PVCC pin to the BOOT pin. Diode Emulation The ISL6268 normally operates in continuous conduction mode (CCM), minimizing conduction losses by forcing the low- side MOSFET to operate as a synchronous rectifier. An improvement in light-load efficiency is achieved by allowing the converter to operate in diode-emulation-mode (DEM), where the low-side MOSFET behaves as a smart-diode, forcing the device to block negative inductor current flow. Positive-going inductor current flows from either the source of the high-side MOSFET, or the drain of the low-side MOSFET. Negative- going inductor current usually flows into the drain of the low- side MOSFET. When the low-side MOSFET conducts positive inductor current, the phase voltage will be negative with respect to the GND and PGND pins. Conversely, when the low-side MOSFET conducts negative inductor current, the phase voltage will be positive with respect to the GND and PGND pins. Negative inductor current occurs when the output load current is less than half the inductor ripple current. Sinking negative inductor through the low-side MOSFET lowers efficiency through unnecessary conduction losses. Efficiency can be further improved with a reduction of unnecessary switching losses by reducing the PWM frequency. It is characteristic of the R3 architecture for the PWM frequency to decrease while in diode emulation. The extent of the frequency reduction is proportional to the reduction of load current. Upon entering DEM, the PWM frequency makes an initial step- reduction because of a 33% step-increase of the window voltage VW. The converter will automatically enter DEM after the PHASE pin has detected positive voltage, while the LG gate-driver pin is high, for eight consecutive PWM pulses. The converter will return to CCM on the following cycle after the PHASE pin detects negative voltage, indicating that the body diode of the low-side MOSFET is conducting positive inductor current. Overcurrent and Short Circuit Protection The overcurrent protection (OCP) and short circuit protection (SCP) setpoint is programmed with resistor RSEN that is connected across the ISEN and PHASE pins. The PHASE pin is connected to the drain terminal of the low-side MOSFET. The SCP setpoint is internally set to twice the OCP setpoint. When an OCP or SCP fault is detected, the PGOOD pin will pull down to 32 and latch off the converter. The fault will remain latched until the EN pin has been pulled below the falling EN threshold voltage VENTHF or if VCC has decayed below the falling POR threshold voltage VVCC_THF. The OCP circuit does not directly detect the DC load current leaving the converter. The OCP circuit detects the peak of positive-flowing output inductor current. The low-side MOSFET drain current ID is assumed to be equal to the positive output inductor current when the high-side MOSFET is off. The inductor current develops a negative voltage across the r DS(on) of the low-side MOSFET that is measured shortly after the LG gate-driver output goes high. The ISEN pin sources the OCP sense current ISEN, through the OCP programming resistor RSEN, forcing the ISEN pin to 0V with respect to the GND pin. The negative voltage across the PHASE and GND pins is nulled by the voltage dropped across RSEN as ISEN conducts through it. An OCP fault occurs if ISEN rises above TABLE 1. PGOOD PULL-DOWN RESISTANCE CONDITION PGOOD RESISTANCE VCC below POR Undefined Soft Start or Undervoltage 95 Overvoltage 63 Overcurrent 32 FIGURE 4. LG AND UG DEAD-TIME UG LG 50% 50% tLGFUGR tUGFLGR |
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