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TMS44409P Datasheet(PDF) 9 Page - Texas Instruments |
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TMS44409P Datasheet(HTML) 9 Page - Texas Instruments |
9 / 26 page TMS44409, TMS44409P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS563 – JULY1995 9 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 timing requirements over recommended ranges of supply voltage and operating free-air temperature (continued) ’44409-60 ’44409P-60 ’44409-70 ’44409P-70 ’44409-80 ’44409P-80 UNIT MIN MAX MIN MAX MIN MAX tRSH Delay time, CAS low to RAS high 10 12 15 ns tRWD Delay time, RAS low to W low 85 98 110 ns tREF Refresh time interval ’44409 16 16 16 ms tREF Refresh time interval ’44409P 128 128 128 ms tT Transition time 2 50 2 50 2 50 ms tWTH Hold time, write low (test mode) 10 10 10 ns tCHS Hold time, CAS low after RAS high ( self refresh ) (TMS44409P only) – 50 – 50 – 50 ns tWTS Setup time, write low (test mode) 10 10 10 ns tCPS CAS precharge before self refresh 0 0 0 ns tRPS RAS precharge after self refresh 110 130 150 ns tRASS Self-refresh entry from RAS low (TMS44409P only) 100 100 100 µs |
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