TMS44409, TMS44409P

1048576-WORD BY 4-BIT

DYNAMIC RANDOM-ACCESS MEMORY

SMHS563 – JULY1995

8

POST OFFICE BOX 1443

timing requirements over recommended ranges of supply voltage and operating free-air

temperature

’44409-60

’44409P-60

’44409-70

’44409P-70

’44409-80

’44409P-80

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

tRC

Cycle time, random read or write (see Note 7)

110

130

150

ns

tRWC

Cycle time, read-write (see Note 7)

150

175

200

ns

tPRWC

Cycle time, EDO page-mode read-write

80

90

100

ns

tRASP

Pulse duration, page mode, RAS low, (see Note 8)

60

100 000

70

100 000

80

100 000

ns

tRAS

Pulse duration, nonpage mode, RAS low, (see Note 8)

60

10 000

70

10 000

80

10 000

ns

tRP

Pulse duration, RAS high (precharge)

40

50

60

ns

tWP

Pulse duration, W

10

10

10

ns

tASC

Setup time, column address before CAS low

0

0

0

ns

tASR

Setup time, row address before RAS low

0

0

0

ns

tDS

Setup time, data before W low (see Note 9)

0

0

0

ns

tRCS

Setup time, read before CAS low

0

0

0

ns

tCWL

Setup time, W low before CAS high

10

12

15

ns

tRWL

Setup time, W low before RAS high

10

12

15

ns

tWCS

Setup time, W low before CAS low ( early-write operation only )

0

0

0

ns

tWSR

Setup time, W high ( CBR refresh only )

10

10

10

ns

tCAH

Hold time, column address after CAS low

10

15

15

ns

tDH

Hold time, data after CAS low (see Note 9)

10

15

15

ns

tRAH

Hold time, row address after RAS low

10

10

10

ns

tRCH

Hold time, read after CAS high (see Note 10)

0

0

0

ns

tRRH

Hold time, read after RAS high (see Note 10)

0

0

0

ns

tWCH

Hold time, write after CAS low ( early-write operation only )

10

15

15

ns

tWHR

Hold time, W high ( CBR refresh only)

10

10

10

ns

tROH

Hold time, RAS referenced to OE

10

10

10

ns

tAWD

Delay time, column address to W low ( read-write operation only )

55

63

70

ns

tCHR

Delay time, RAS low to CAS high ( CBR refresh only )

15

15

20

ns

tCRP

Delay time, CAS high to RAS low

0

0

0

ns

tCSR

Delay time, CAS low to RAS low ( CBR refresh only )

5

5

5

ns

tCWD

Delay time, CAS low to W low ( read-write operation only )

40

46

50

ns

tOEH

Hold time, OE command

15

18

20

ns

tOED

Delay time, valid data in after OE high

15

18

20

ns

tRAD

Delay time, RAS low to column address

15

30

15

35

15

40

ns

tRAL

Delay time, column address to RAS high

30

35

40

ns

tCAL

Delay time, column address to CAS high

20

25

30

ns

tRCD

Delay time, RAS low to CAS low ( see Note 11)

20

45

20

52

20

60

ns

tRPC

Delay time, RAS high to CAS low ( CBR refresh only )

0

0

0

ns

NOTES:

7. All timing requirements assume tT = 5 ns.

8. In a read-write cycle, tRWD and tRWL must be observed.

9. Referenced to the later of CAS or W in write operations

10. The minimum value is measured when tRCD is set to tRCD min as a reference.

11. The minimum value is specified only to assure access time.