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2N7002MTF Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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2N7002MTF Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 4 page N-CHANNEL Small Signal MOSFET Electrical Characteristics (T C=25℃ unless otherwise specified) Characteristic Symbol Max. Units Typ. Min. Test Condition 2N7002MTF BV DSS V GS(th) I GSS I DSS I D(ON) R DS(on) g fs C iss C oss C rss t d(on) t r t d(off) t f Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance ② Forward Transconductance ② Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 60 1.0 - - - - 0.5 - 0.08 - - - - - - - - - - - - - - - - - - - - - - - - 2.5 100 -100 1.0 500 - 5.0 - 50 25 5 20 - 20 - V V nA µA A Ω S pF ns V GS = 0V, ID = 250µA V DS = VGS, ID = 250µA V GS = 20V V GS = -20V V GS = 40V V GS = 40V, TC = 125℃ V DS = 10V, VGS = 10V V GS = 10V, ID = 0.5A V DS = 15V, ID = 0.2A V DS = 25V, VGS = 0V, f = 1.0MHz V DD = 30V, ID = 0.2A R G = 25Ω ②③ Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ③ Essentially Independent of Operating Temperature Source-Drain Diode Ratings and Characteristics Characteristic Symbol Max. Units Typ. Min. Test Condition I S I SD V SD Continuous Source Current Pulse Source Current ① Diode Forward Voltage ② - - - - - - 115 800 1.5 mA mA V Integral reverse pn-diode In the MOSFET T A = 25 ℃, IS = 115mA V GS = 0V |
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