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ISL6729IBZ Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # ISL6729IBZ
Description  Low-Cost, Single-Ended, Current-Mode PWM for Microcontroller Based Power Converters
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL6729IBZ Datasheet(HTML) 4 Page - Renesas Technology Corp

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ISL6729
FN9152 Rev 3.00
Page 4 of 8
December 21, 2016
Absolute Maximum Ratings
Thermal Information
Supply Voltage, VDD. . . . . . . . . . . . . . . . . . . . . . . . . . . (GND - 0.3V) to +6.5V
OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(GND - 0.3V) to VDD + 0.3V
Signal Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND - 0.3V) to 6.5V
Peak GATE Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
ESD Classification
Human Body Model (Per MIL-STD-883 Method 3015.7). . . . . . . . . . 2kV
Charged Device Model (Per EOS/ESD DS5.3, 4/14/93). . . . . . . . . . 1kV
Operating Conditions
Temperature Range
ISL6729Ix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +105°C
Supply Voltage Range (Typical)
ISL6729. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.75V to 5.25V
Thermal Resistance (Typical, Note 4)
JA (°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
MSOP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
130
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . .-55°C to +150°C
Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
4.
JA is measured with the component mounted on a high-effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
5. All voltages are with respect to GND.
Electrical Specifications Recommended operating conditions unless otherwise noted. Refer to Figure 1 on page 2 and Figure 2 on
page 3. VDD = 5V, CLK = 50kHz, TA = -40 to +105°C (Note 6), Typical values are at TA = +25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
UNDERVOLTAGE LOCKOUT
START Threshold
4.15
4.50
4.75
V
STOP Threshold
4.00
4.30
4.60
V
Hysteresis
-0.2
-
V
Start-Up Current, IDD
VDD < START threshold
-
0.4
12
mA
Operating Current, IDD
(Note 7)-
3.3
5.5
mA
Operating Supply Current, ID
Includes 1nF GATE loading
-
4.1
6.0
mA
CURRENT SENSE
Input Bias Current
VCS = 1V
-1.0
-
1.0
µA
CS Offset Voltage
VCS = 0V (Note 8)
95
100
105
mV
COMP to PWM Comparator Offset Voltage
VCS = 0V (Note 8)
0.80
1.15
1.30
V
CS Input Signal, Maximum
0.91
0.97
1.03
V
Gain, ACS = VCOMP/VCS
0 < VCS < 910mV, VFB = 0V. (Note 8)
2.5
3.0
3.5
V/V
CS to OUT Delay
(Note 8)
-
25
40
ns
CLOCK
Input High Voltage Level, VIH
-2.8
-
V
Input Low Voltage Level, VIL
-2.7
-
V
Maximum Clock Rate
(Note 8)2
-
-
MHz
OUTPUT
Gate VOH
VDD - OUT, IOUT = -200mA
-
1.0
2.0
V
Gate VOL
OUT - GND, IOUT = 200mA
-
1.0
2.0
V
Peak Output Current
COUT = 1nF (Note 8)1.0
-
-
A
Rise Time
COUT = 1nF (Note 8)
-
20
40
ns
Fall Time
COUT = 1nF (Note 8)
-
20
40
ns


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