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ISL9000IRNCZ Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # ISL9000IRNCZ
Description  Dual LDO with Low Noise, Very High PSRR and Low IQ
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL9000IRNCZ Datasheet(HTML) 4 Page - Renesas Technology Corp

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ISL9000
FN9217 Rev 4.00
Page 4 of 11
March 11, 2008
Device Enable Time
tEN
Time from assertion of the ENx pin to when the output
voltage reaches 95% of the VO(nom)
250
500
µs
LDO Soft-Start Ramp Rate
tSSR
Slope of linear portion of LDO output voltage ramp during
start-up
30
60
µs/V
EN1, EN2 PIN CHARACTERISTICS
Input Low Voltage
VIL
-0.3
0.5
V
Input High Voltage
VIH
1.4
VIN +
0.3
V
Input Leakage Current
IIL, IIH
0.1
µA
Pin Capacitance
CPIN
Informative
5
pF
POR1, POR2 PIN CHARACTERISTICS
POR1, POR2 Thresholds
VPOR+
As a percentage of nominal output voltage
91
94
97
%
VPOR-
87
90
93
%
POR1 Delay
tP1LH
1.0
2.0
3.0
ms
tP1HL
25
µs
POR2 Delay
tP2LH
CPOR = 0.01µF
100
200
300
ms
tP2HL
25
µs
POR1, POR2 Pin Output Low
Voltage
VOL
@IOL = 1.0mA
0.2
V
POR1, POR2 Pin Internal Pull-Up
Resistance
RPOR
78
100
180
k
NOTES:
6. Limits established by characterization and are not production tested.
7. VOx = 0.98*VOx(NOM); Valid for VOx greater than 1.85V.
8. Parts are 100% tested at +25°C. Temperature limits established by characterization and are not production tested.
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows:
TA = -40°C to +85°C; VIN = (VO + 0.5V) to 6.5V with a minimum VIN of 2.3V; CIN = 1µF; CO = 1µF;
CBYP = 0.01µF; CPOR = 0.01µF. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
(Note 8)
TYP
MAX
(Note 8)
UNITS
VPOR+
VPOR+
VPOR-
<tP1HL
tP2LH
tP1LH
tP1HL
tP2HL
<tP2HL
VO1
VO2
POR1
POR2
EN2
tEN
VPOR-
FIGURE 1. TIMING PARAMETER DEFINITION
EN1


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