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ISL9003AIERZ-T Datasheet(PDF) 10 Page - Renesas Technology Corp |
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ISL9003AIERZ-T Datasheet(HTML) 10 Page - Renesas Technology Corp |
10 / 12 page FN6299 Rev 5.00 Page 10 of 12 July 18, 2014 ISL9003A Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com For additional products, see www.intersil.com/en/products.html © Copyright Intersil Americas LLC 2006-2014. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. The LDO uses an independently trimmed 1V reference as its input. An internal resistor divider drops the LDO output voltage down to 1V. This is compared to the 1V reference for regulation. The resistor division ratio is programmed in the factory. Overheat Detection The bandgap outputs a proportional-to-temperature current that is indicative of the temperature of the silicon. This current is compared with references to determine if the device is in danger of damage due to overheating. When the die temperature reaches about +140 °C, the LDO momentarily shuts down until the die cools sufficiently. In the overheat condition, if the LDO sources more than 50mA it will be shut off. Once the die temperature falls back below about +110 °C, the disabled LDO is re-enabled and soft-start automatically takes place. Exposed Thermal Pad The ISL9003A with µTDFN package has an exposed thermal pad at the bottom side of the package. The PCB layout should connect the exposed pad to some copper on the component layer for a good thermal conductivity. Since the copper area on the component layer is limited by the surrounding pins of the package, it is more effective to use some thermal vias to conduct the heat to other copper layers if possible. Electrically the copper and vias connecting to the exposed pad should be isolated from any other pin connection, they are strictly for thermal enhancement purpose. |
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