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AO3418L Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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AO3418L Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 4 page Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 70 90 100 125 RθJL 63 80 Junction and Storage Temperature Range A PD °C 1.4 0.9 -55 to 150 TA=70°C ID 3.8 3.1 15 Pulsed Drain Current B Power Dissipation A TA=25°C Continuous Drain Current A Maximum Units Parameter TA=25°C TA=70°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V ±12 Gate-Source Voltage Drain-Source Voltage 30 °C/W Maximum Junction-to-Ambient A Steady-State °C/W W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor Rev 3: Nov 2004 Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package. G D S S G D TO-236 (SOT-23) Top View Alpha & Omega Semiconductor, Ltd. |
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