AO3418L datasheet(1/4 Pages) ETC

Part #	AO3418L

Description	N-Channel Enhancement Mode Field Effect Transistor

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Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

70

90

100

125

RθJL

63

80

Junction and Storage Temperature Range

A

PD

°C

1.4

0.9

-55 to 150

TA=70°C

ID

3.8

3.1

15

Pulsed Drain Current

B

Power Dissipation

A

TA=25°C

Continuous Drain

Current

A

Maximum

Units

Parameter

TA=25°C

TA=70°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±12

Gate-Source Voltage

Drain-Source Voltage

30

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

W

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

AO3418, AO3418L ( Green Product )

N-Channel Enhancement Mode Field Effect Transistor

Rev 3: Nov 2004

Features

VDS (V) = 30V

ID = 3.8 A

RDS(ON) < 60mΩ (VGS = 10V)

RDS(ON) < 70mΩ (VGS = 4.5V)

RDS(ON) < 155mΩ (VGS = 2.5V)

General Description

The AO3418 uses advanced trench technology to

provide excellent RDS(ON), very low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. AO3418L ( Green Product ) is offered in

a lead-free package.

G

D

S

G

D

TO-236

(SOT-23)

Top View

Alpha & Omega Semiconductor, Ltd.

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AO3418L Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

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