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FP100R06KE3 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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FP100R06KE3 Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 11 page  4 TechnischeInformation/TechnicalInformation FP100R06KE3 IGBT-Module IGBT-modules preparedby:AS approvedby:RS dateofpublication:2013-10-03 revision:2.0 VorläufigeDaten PreliminaryData Diode,Brems-Chopper/Diode,Brake-Chopper HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C VRRM 600 V Dauergleichstrom ContinuousDCforwardcurrent IF 30 A PeriodischerSpitzenstrom Repetitivepeakforwardcurrent tP = 1 ms IFRM 60 A Grenzlastintegral I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 90,0 82,0 A²s A²s CharakteristischeWerte/CharacteristicValues min. typ. max. Durchlassspannung Forwardvoltage IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V VF 1,60 1,55 1,50 2,00 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Rückstromspitze Peakreverserecoverycurrent IF = 30 A, - diF/dt = 600 A/µs (Tvj=150°C) VR = 300 V IRM 22,0 24,0 27,0 A A A Tvj = 25°C Tvj = 125°C Tvj = 150°C Sperrverzögerungsladung Recoveredcharge IF = 30 A, - diF/dt = 600 A/µs (Tvj=150°C) VR = 300 V Qr 1,15 2,30 2,70 µC µC µC Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltenergieproPuls Reverserecoveryenergy IF = 30 A, - diF/dt = 600 A/µs (Tvj=150°C) VR = 300 V Erec 0,12 0,30 0,36 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proDiode/perdiode RthJC 1,80 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proDiode/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,56 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C NTC-Widerstand/NTC-Thermistor CharakteristischeWerte/CharacteristicValues min. typ. max. Nennwiderstand Ratedresistance TC = 25°C R25 5,00 k Ω AbweichungvonR100 DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 % Verlustleistung Powerdissipation TC = 25°C P25 20,0 mW B-Wert B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-Wert B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 t.b.d. K B-Wert B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 t.b.d. K AngabengemäßgültigerApplicationNote. Specificationaccordingtothevalidapplicationnote. |
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