BAV116WSQ datasheet(2/5 Pages) DIODES

Part #	BAV116WSQ

Description	SURFACE MOUNT LOW LEAKAGE DIODE

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Manufacturer	DIODES [Diodes Incorporated]

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BAV116WSQ

Document number: DS38488 Rev. 2 - 2

2 of 5

www.diodes.com

January 2016

BAV116WSQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

85

V

RMS Reverse Voltage

VR(RMS)

60

V

Forward Continuous Current (Note 6)

IFM

215

mA

Repetitive Peak Forward Current

IFRM

500

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0µs

@ t = 1.0ms

@ t = 1.0s

IFSM

4.0

1.0

0.5

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

PD

200

mW

Thermal Resistance Junction to Ambient Air (Note 6)

RJA

625

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 7)

V(BR)R

85



V

IR = 100µA

Forward Voltage

VF



0.9

1.0

1.1

1.25

V

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

Leakage Current (Note 7)

IR



5.0

80

nA

VR = 75V

VR = 75V, TJ = +150°C

Total Capacitance

CT



1.5



pF

VR = 0, f = 1.0MHz

Reverse Recovery Time

trr



3.0

µs

IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100Ω

Notes:

6. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

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