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NTE6032 Datasheet(PDF) 2 Page - NTE Electronics

Part # NTE6032
Description  Silicon Power Rectifier Diode, 40 Amp
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE6032 Datasheet(HTML) 2 Page - NTE Electronics

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Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum Average Forward Current
IF (AV)
180
° sinusoidal condition, TC = +75°C Max
40
A
Maximum Peak One–Cycle
IFSM
t = 10ms
Half sinewave current, rated VRRM
°
400
A
Non–Repetitive Surge Current
t = 8.3ms
reapplied, initial TJ = +125°C
420
A
t = 10ms
Half sinewave current, no voltage
°
475
A
t = 8.3ms
reapplied, initial TJ = +125°C
500
A
Maximum I2t for Fusing
I2t
t = 10ms
Rated VRRM reapplied, initial
°
800
A2s
t = 8.3ms
TJ = +125°C
730
A2s
Maximum I2t for Individual Device
t = 10ms
No voltage reapplied, initial
°
1150
A2s
Fusing
t = 8.3ms
TJ = +125°C
1050
A2s
Maximum I2
pt
I2
pt
t = 0.1 to 10ms, no voltage reapplied, Note 1
11500
A2
pt
Maximum Peak Forward Voltage
VFM
TJ = +25°C, IFM = 125A
1.95
V
Maximum Reverse Recovery Time
trr
TJ = +25°C, IF = 1A to VR = 30V, –dIF/dt = 100A/µs
350
ns
TJ = +25°C, IF = 125A, –dIF/dt = 25A/µs
1000
ns
Maximum Reverse Recovery Charge
QRR
TJ = +25°C, IF = 1A to VR = 30V, –dIF/dt = 100A/µs
3100
nC
TJ = +25°C, IF = 125A, –dIF/dt = 25A/µs
6000
nC
Note 1. I2t for time tx = I2pt • ptx.
1/4–28 UNF–2A
.450 (11.4) Max
.140 (3.65) Dia Max
.667 (16.9) Dia Max
.375 (9.55) Max
.687
(17.4)
Max
1.289
(32.7)
Max
.450
(11.4)
Max
.453
(11.5)
Max


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