K6R4008V1B-I12 datasheet(7/10 Pages) SAMSUNG

Part #	K6R4008V1B-I12

Description	CMOS SRAM

Download	10 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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7 / 10 page

K6R4008V1B-C/B-L, K6R4008V1B-I/B-P

CMOS SRAM

PRELIMINARY

Rev 2.2

- 7 -

May 1999

TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)

Address

CS

tWP(2)

tDW

tDH

Valid Data

WE

Data in

Data out

tWC

tWR(5)

tAW

tCW(3)

High-Z(8)

High-Z

OE

tOHZ(6)

tAS(4)

TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)

Address

CS

tWP1(2)

tDW

tDH

tOW

tWHZ(6)

Valid Data

WE

Data in

Data out

tWC

tAS(4)

tWR(5)

tAW

tCW(3)

(10)

(9)

High-Z(8)

High-Z

TIMING WAVEFORM OF WRITE CYCLE(3) (CS = Controlled)

Address

CS

tAW

tDW

tDH

Valid Data

WE

Data in

Data out

High-Z

High-Z(8)

tCW(3)

tWP(2)

tAS(4)

tWC

tWR(5)

High-Z

tLZ

tWHZ(6)

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