K6R4008V1B-C/B-L, K6R4008V1B-I/B-P

CMOS SRAM

PRELIMINARY

Rev 2.2

- 1 -

May 1999

Document Title

512Kx8 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

RevNo.

Rev. 0.0

Rev. 1.0

Rev. 2.0

Rev. 2.1

Rev. 2.2

Remark

Design Target

Preliminary

Final

Final

Final

History

Initial release with Design Target.

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary.

Release to Final Data Sheet.

2.1. Delete Preliminary.

2.2. Add 30pF capacitive in test load.

2.3. Relax DC characteristics.

Change operating current at Industrial Temperature range.

Previous spec.

Changed spec.

Items

(10/12/15ns part)

(10/12/15ns part)

Icc

205/200/195mA

230/225/220mA

Add 44 pins plastic TSOP(II) forward Package.

Item

Previous

Current

10ns

170mA

205mA

12ns

160mA

200mA

15ns

150mA

195mA

f=max.

40mA

50mA

f=0

10 / 1mA

10 / 1.2mA

0.9mA

1.0mA

Draft Data

Jan. 1st, 1997

Jun. 1st, 1997

Feb.11th.1998

Jun.27th 1998

May. 4th 1999