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T436416A-6S Datasheet(PDF) 5 Page - Taiwan Memory Technology

Part # T436416A-6S
Description  4M X 16 SDRAM
Download  29 Pages
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Manufacturer  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T436416A-6S Datasheet(HTML) 5 Page - Taiwan Memory Technology

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TE
CH
tm
T436416A
TM Technology Inc. reserves the right
P. 5
Publication Date: MAY. 2003
to change products or specifications without notice.
Revision: B
DC CHARACTERISTICS
TA = 0 to 70
°C , VIH(min)/VIL(max)=2.0V/0.8V
Speed version
Parameter
Symbol
-6
-7
-7.5
-8
-10
Unit
Test Condition
Note
Operating Current
( One Bank Active)
ICC1
140 120 115 110 100 mA
Burst Length = 1
tRCtRC(min) ,tCCtCC(min),IOL= 0 mA
1,3
ICC2P
2
CKE
VIL(max),tCC=15ns
Precharge Standby
Current in power-
down mode
ICC2PS
2
mA
CKE
VIL(max),CLK VIL(max), tCC =
3
ICC2N
30
CKE
VIH(min), CS VIH(min),tCC=15ns
Input signals are changed one time during 30ns
Precharge Standby
Current in non
power-down mode
ICC2NS
2
mA
CKE
VIH(min),CLK
VIL(min),tCC=
Input signals are stable
3
ICC3P
10
CKE
VIL(max),tCC=15ns
Active Standby
Current in power-
down mode
ICC3PS
10
mA
CKE
VIL(max),CLK VIL(max),tCC=
3
ICC3N
40
CKE
VIH(min), CS VIH(min),tCC=15ns
Input signals are changed one time during 30ns
Active Standby
Current in non
power-down mode
(One Bank Active) ICC3NS
10
mA
CKE
VIH(min),CLK
VIL(min),tCC=
Input signals are stable
3
150 130 125 120 110
CAS Latency 3
Operating Current
(Burst Mode)
ICC4
150 130 125 120 110
mA
CAS Latency 2
IOL=0 mA,Page Burst
All Band Activated
tCCD= tCCD(min)
1,3
Refresh Current
ICC5
150 130 125 120 110 mA tRC tRC(min)
2,3
Self refresh
Current
ICC6
1
mA
CKE
0.2V
Note:
1. Measured with output open. Addresses are changed only one time during
tCC(min) .
2. Refresh period is 64ms. Addresses are changed only one time during
tCC(min) .
3.
tCC : Clock cycle time.
tRC : Row cycle time.
tCCD : Column address to column address delay time.


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